SiC Schottky barrier diode achieving low switching loss
We would like to introduce our "SiC Schottky Barrier Diode (SBD)." In addition to the product's feature of fast reverse recovery time (trr), it adopts a JBS (Junction Barrier Schottky) structure. We offer a 650V product that achieves low leakage current (Ir) and high surge current, which are required for switching power supplies. 【Features】 ■ High reverse voltage ■ Adoption of JBS (Junction Barrier Schottky) structure ■ A 650V product that achieves low leakage current (Ir) and high surge current required for switching power supplies *For more details, please refer to the PDF document or feel free to contact us.
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Toshiba Device & Storage Corporation was established as an independent company from Toshiba Corporation's internal company in July 2017. In addition to the traditional semiconductor business, storage products business, and semiconductor manufacturing equipment business handled by New Flare Technology Corporation, we also encompass a broad range of component businesses, including the parts and materials business managed by Toshiba Materials Corporation and Toshiba Hokuto Electronics Corporation starting in April. We consist of the Discrete Semiconductor Division, System Devices Division, Storage Products Division, and Device & Storage Research and Development Center, aiming to create products with higher added value.
