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  6. 4M-bit FeRAM 'MB85RS4MTY' *4 documents are currently being distributed.

4M-bit FeRAM 'MB85RS4MTY' *4 documents are currently being distributed.

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last updated:Jun 07, 2024

RAMXEED (旧:富士通セミコンダクターメモリソリューション株式会社 2025/1/1に社名変更しました)
RAMXEED (旧:富士通セミコンダクターメモリソリューション株式会社 2025/1/1に社名変更しました)
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Capable of up to 10 trillion data rewrites even in high-temperature environments of up to 125°C. Suitable non-volatile memory for automotive and industrial machinery applications.

"FeRAM" is a non-volatile memory that uses ferroelectric elements. It offers advantages such as high rewrite endurance, fast writing speed, and low power consumption. In particular, the "MB85RS4MTY" is a 4M-bit FeRAM developed to meet the growing demand for larger capacities, building on the 2M-bit FeRAM "MB85RS2MTY." Even in high-temperature environments of 125°C, it can handle up to 10 trillion data write cycles, making it suitable for automotive applications such as advanced driver-assistance systems (ADAS) and industrial robots. 【Features】 ■ Operates with a wide power supply voltage range of 1.8 to 3.6V ■ Adopts SPI interface ■ Even in high-temperature environments, the operating current is a maximum of 4mA (at 50MHz operation), and the power-down current is a maximum of 30μA, ensuring low power consumption. *We are currently offering materials that introduce detailed features and application examples of "FeRAM." You can view them via "PDF download." Please feel free to contact us for inquiries.

    Memory
fig_02_w800.jpg

4M-bit FeRAM 'MB85RS4MTY' *4 documents are currently being distributed.

fig_02_w800.jpg
fig_02_w800.jpg fig_01_tcm276-6138595_tcm276-2750236-32.jpg
  • Related Link - https://www.fujitsu.com/jp/group/fsm/products/fram…
  • Special site - Product/service details - https://pr.mono.ipros.com/fujitsu-group-fsm/produc…

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basic information

【About FeRAM】 It is a non-volatile memory that retains data even when the power is turned off, while also possessing the advantages of volatile memory, such as high rewrite endurance and fast writing speeds. The structure of storing data in a ferroelectric material allows for a maximum of 10 trillion data rewrite cycles. Additionally, due to the short writing time, it consumes less power, and no current is needed for data retention. Replacing EEPROM and SRAM is expected to solve various challenges. *For more details, please refer to the materials. Feel free to contact us as well.

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Well-suited for in-vehicle applications represented by advanced driver assistance systems (ADAS) and industrial robots.

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MB85RS4MTY The 4M-bit FeRAM, which has the largest memory capacity as a FeRAM product guaranteed to operate at 125℃.

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Ferroelectric Memory "FeRAM Business Case" *Introducing applications in use!

Ferroelectric Memory "FeRAM Business Case" *Introducing applications in use!

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Fundamentals of Ferroelectric Memory 'FeRAM' - Explanation of what FeRAM is!

Fundamentals of Ferroelectric Memory 'FeRAM' - Explanation of what FeRAM is!

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Started mass production of 4M-bit FeRAM operating at 125°C in accordance with automotive grade standards.

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Fujitsu Semiconductor Memory Solution Limited has started mass production of the 125°C operating 4M-bit FeRAM "MB85RS4MTY" from this month. This product complies with the high-quality standard AEC-Q100 Grade 1, known as automotive grade, and is suitable for advanced driver assistance systems (ADAS) and high-performance industrial robots that require high reliability.

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RAMXEED

RAMXEED (旧:富士通セミコンダクターメモリソリューション株式会社 2025/1/1に社名変更しました)

Electronic Components and Semiconductors

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Our company has been providing high-quality, high-performance memory LSI that is essential for high-function electronic devices for many years. In recent years, we have been offering memory products that are compact, high-performance, and low power consumption, as well as proposing appropriate solutions that combine memory. Please feel free to contact us if you have any requests.

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