1M-bit FeRAM 'MB85RC1MT' is optimal as memory for FA control devices, measurement meters, and industrial machinery.
The "MB85RC1MT," our largest memory capacity FeRAM with an I2C interface, has a capacity of 1 megabit and guarantees 10 trillion write cycles, making it an ideal product for FA control devices, measurement meters, and industrial machinery that require frequent rewrites such as real-time logging. We offer a wide range of FeRAM products with both I2C and SPI serial interfaces, allowing us to provide the optimal non-volatile memory products to meet our customers' needs. ■ Features This product is the 1 megabit (128K words x 8 bits) FeRAM "MB85RC1MT" with an I2C interface. It operates at a low voltage of 1.8V to 3.3V within a temperature range of -40°C to +85°C. In addition to a standard operating frequency of 1MHz, comparable to EEPROM, it supports a high-speed mode for reading and writing at 3.4MHz. The guaranteed rewrite cycle count far exceeds that of general-purpose EEPROM, reaching 10 trillion cycles, thus strongly supporting frequent data rewrites such as real-time logging in I2C products.
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basic information
We have a lineup of FeRAM products ranging from 4K bits to 1M bits for the I2C interface and from 16K bits to 2M bits for the SPI interface. These products are offered in an industry-standard 8-pin SOP package, allowing for the replacement of non-volatile memory such as EEPROM and serial flash memory in applications like FA control devices, measurement meters, and industrial machinery without significant changes to the design of the circuit board.
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It guarantees 10 trillion rewrites, making it suitable for FA control devices, measurement meters, industrial machinery, and other applications that require frequent rewrites such as real-time logging.
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Our company has been providing high-quality, high-performance memory LSI that is essential for high-function electronic devices for many years. In recent years, we have been offering memory products that are compact, high-performance, and low power consumption, as well as proposing appropriate solutions that combine memory. Please feel free to contact us if you have any requests.
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