Method for manufacturing semiconductor substrates

In the technical field of semiconductor substrate manufacturing, it is possible to obtain a high-quality HT-semiconductor layer.

The present invention aims to obtain a semiconductor layer with good crystal quality on a base substrate. A semiconductor is deposited at a relatively low temperature from the surface of the exposed base substrate through numerous openings formed in a thin film that covers the surface of the base substrate, thereby forming an LT-semiconductor layer on the thin film. Subsequently, a semiconductor is crystallized at a relatively high temperature from the LT-semiconductor layer, forming an HT-semiconductor layer on the LT-semiconductor layer, which allows for the acquisition of an HT-semiconductor layer with good crystal quality on the base substrate. [Key Points of Resolution] (1) In the method for manufacturing a semiconductor substrate, the surface of the base substrate 11 is covered with a thin film 12 having numerous openings formed therein. (2) A semiconductor is deposited at a relatively low temperature from the surface of the exposed base substrate 11 through the numerous openings in the thin film 12, forming an LT-semiconductor layer 13 on the thin film. (3) A semiconductor is crystallized at a relatively high temperature from the LT-semiconductor layer 13, forming an HT-semiconductor layer 14 on the LT-semiconductor layer 13. *For more details, please refer to the PDF document or feel free to contact us.

Other semiconductors