High UIS characteristics! High voltage super junction MOSFET for power management.
The "ICE47N60W N-channel device" is a highly regarded super junction MOSFET from IceMOS. It is designed for high-performance power systems and is used in AC/DC, DC/DC, and DC/AC circuits around the world. 【Features】 ■ TO247 package ■ Low on-resistance ■ Ultra-low gate charge ■ High dv/dt withstand capability ■ High UIS characteristics ■ High peak current tolerance ■ Enhanced transconductance performance *For more details, please refer to the PDF document or feel free to contact us. *You can download the English version of the catalog.
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*For more details, please refer to the PDF document or feel free to contact us. *You can download the English version of the catalog.
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*For more details, please refer to the PDF document or feel free to contact us. *You can download the English version of the catalog.
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Our company was established in 2004 as a best-in-class supplier providing high-voltage power MOSFETs and MEMS technology processes that deliver high performance for power supplies, advanced technology base wafers, SOI (silicon on insulator), and bonded silicon substrates at a high cost-effectiveness. (Headquartered in the U.S., with manufacturing facilities in the U.K. and R&D in Tokyo) We have developed and realized high-voltage super junction MOSFETs with innovative deep trench etching MEMS structures through a simple and low-cost process. Please feel free to contact us if you have any inquiries.