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  2. Electronic Components and Semiconductors
  3. アイスモス・テクノロジー・ジャパン
Electronic Components and Semiconductors
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アイスモス・テクノロジー・ジャパン

EstablishmentOctober 2, 2004
capital250000Ten thousand
number of employees92
addressTokyo/Koto-ku/2-7-4 Qinghai, the SOHO 0603
phone090-8614-7889
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last updated:Jun 10, 2026
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  • Products/Services(31)
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アイスモス・テクノロジー・ジャパン Company Overview

We are a manufacturer of power MOSFET and MEMS technology-based wafers. We lead in manufacturing and development with MEMS and bonding technology!

Our company was established in 2004 as a best-in-class supplier providing high-voltage power MOSFETs and MEMS technology processes that deliver high performance for power supplies, advanced technology base wafers, SOI (silicon on insulator), and bonded silicon substrates at a high cost-effectiveness. (Headquartered in the U.S., with manufacturing facilities in the U.K. and R&D in Tokyo) We have developed and realized high-voltage super junction MOSFETs with innovative deep trench etching MEMS structures through a simple and low-cost process. Please feel free to contact us if you have any inquiries.

Business Activities

【Product Line】 ■ Manufacturing of technical silicon substrates, foundry services SOI = Silicon on Insulator SiSi = Silicon Silicon bonded MEMS = Microelectromechanical Systems DSOI = Double SOI DSP = Double Sided Polished CSOI = Cavity SOI Thin SOI TSOI = Trench SOI TSV = Through-Silicon Vias ■MOSFET Category 1. MEMS Super Junction MOSFET (High Avalanche Withstand) 600V–730V 2. Fast Recovery Super Junction MOSFET (K Series) 600V–650V 3. SiC MOSFET (M Series) 650V, 750V, 1200V, 1400V, 1500V 4. SGTMOS (K Series, Ultra-Low Resistance) 30–150V 

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Products/Services (31)

The ICE8N60T, 8A, 600V TOLL package is now available! product image
The ICE8N60T, 8A, 600V TOLL package is now available!
ICE8N60FP, 8A,600V TO220FullPak product image
ICE8N60FP, 8A,600V TO220FullPak
ICE8N60LK, 13A, 600V DFN56 New Arrival!! product image
ICE8N60LK, 13A, 600V DFN56 New Arrival!!
ICE13N60FP, 13A, 600V TO220FP has arrived. product image
ICE13N60FP, 13A, 600V TO220FP has arrived.

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catalog(25)

Survey responses are required to view e-book details. Click to view the e-book.

Proposal for Power MOSFETs for AI Data Centers

Proposal for Power MOSFETs for AI Data Centers

APPLICATION_NOTE
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SJ MOSFET Leaflet

SJ MOSFET Leaflet

PRODUCT
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ICE20N60T datasheet

ICE20N60T datasheet

DOCUMENT
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Icemos wafer Leaflet JP5

Icemos wafer Leaflet JP5

CATALOG
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news(40)

Breaking the limits of silicon and surpassing the limits of SiC.

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An article by Senior Application Technologist Adrian Wong has been published in Bodo's Power Systems magazine. It introduces the development and roadmap of new MOSFET technology that surpasses the limits of silicon and SiC in high-voltage power conversion. Utilizing silicon superjunction MOSFET technology and applications, IceMOS has developed high-voltage superjunction MOSFETs using MEMS technology. They are already offering commercial products ranging from 600V to 730V. Regarding the current status and challenges of SiC devices, while SiC excels in high voltage and fast switching, there are limits to efficiency improvements. The roadmap for 4H-SiC is focused on developing devices with lower losses. IceMOS is introducing a superjunction structure to SiC to enhance performance. In the future device structure and roadmap, IceMOS is pursuing next-generation structures for both silicon and SiC. The superjunction technology of 4H-SiC has the potential to significantly exceed the performance of conventional SiC. Future devices may fundamentally change the trade-off between performance and cost for silicon and SiC.

Aug 21, 2026

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UK pavillion I3000.png

Exhibiting at SEMICON TAIWAN 2026

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Our company, Ice Moss Technology, will be exhibiting at SEMICON TAIWAN, which will be held from September 2 to 4, 2026. We look forward to seeing you at the UK Pavilion, Booth I3000 on the 1st floor of TaiNEX1.

Aug 21, 2026

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Exhibition information and free tickets for PCIM Europe 2026 in Nuremberg, Germany.

  • SEMINAR_EVENT

IceMos Technology is expanding its latest HV MOSFET product lineup (600-1500V) while maintaining the reliability and price competitiveness of silicon. We would like to introduce this to everyone involved in the development of next-generation power electronics. Here is IceMos's booth: PCIM Europe 2026 (Hall 5, Booth 439) Free tickets are limited, so please contact us as soon as possible. Please send an email to pcim2026@icemostech.com with the subject "Free Tickets PCIM 2026" and include the following information: • Name (full name) • Company website • Position • Desired date of attendance We look forward to seeing you in Nuremberg!

May 26, 2026

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Detailed information

Company name アイスモス・テクノロジー・ジャパン
number of employees92
Contact addresspostalcode 135-0064 Tokyo/ Koto-ku/ 2-7-4 Qinghai, the SOHO 0603View on map TEL:090-8614-7889 FAX:03-5579-6707
Industry Electronic Components and Semiconductors
アイスモス・テクノロジー・ジャパン Building Image

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