アイスモス・テクノロジー・ジャパン List of News Articles

An article by Senior Application Technologist Adrian Wong has been published in Bodo's Power Systems magazine. It introduces the development and roadmap of new MOSFET technology that surpasses the limits of silicon and SiC in high-voltage power conversion. Utilizing silicon superjunction MOSFET technology and applications, IceMOS has developed high-voltage superjunction MOSFETs using MEMS technology. They are already offering commercial products ranging from 600V to 730V. Regarding the current status and challenges of SiC devices, while SiC excels in high voltage and fast switching, there are limits to efficiency improvements. The roadmap for 4H-SiC is focused on developing devices with lower losses. IceMOS is introducing a superjunction structure to SiC to enhance performance. In the future device structure and roadmap, IceMOS is pursuing next-generation structures for both silicon and SiC. The superjunction technology of 4H-SiC has the potential to significantly exceed the performance of conventional SiC. Future devices may fundamentally change the trade-off between performance and cost for silicon and SiC.

Our company, Ice Moss Technology, will be exhibiting at SEMICON TAIWAN, which will be held from September 2 to 4, 2026. We look forward to seeing you at the UK Pavilion, Booth I3000 on the 1st floor of TaiNEX1.

IceMos Technology is expanding its latest HV MOSFET product lineup (600-1500V) while maintaining the reliability and price competitiveness of silicon. We would like to introduce this to everyone involved in the development of next-generation power electronics. Here is IceMos's booth: PCIM Europe 2026 (Hall 5, Booth 439) Free tickets are limited, so please contact us as soon as possible. Please send an email to pcim2026@icemostech.com with the subject "Free Tickets PCIM 2026" and include the following information: • Name (full name) • Company website • Position • Desired date of attendance We look forward to seeing you in Nuremberg!