The arithmetic average roughness (Ra) can be reduced to 0.06 nm.
"Step alignment processing" is a pre-treatment (or post-treatment) that promotes the smoothing of the surface of single crystal SiC wafers (including the epitaxial surface). It exhibits a significant smoothing effect on the Si face of single crystal SiC and promotes the uniformity of step intervals on slightly inclined substrates. In addition to the low thermal stress applied to the SiC substrate, it is a batch processing method, which reduces costs as the number of processed wafers increases. [Achievements] In the manufacturing process of SiC devices, it has been confirmed that applying step alignment processing before the thermal oxidation film improves the smoothness of the oxide film/SiC interface. *For more details, please download the PDF or feel free to contact us.
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