TOF-SIMS can evaluate organic substances at metal interfaces in the depth direction.
Organic substances at metal interfaces can cause poor adhesion and delamination. For analyzing this poor adhesion, physically peeling off the layers and conducting qualitative analysis on the peeled surfaces is effective (refer to analysis case C0198). On the other hand, there are many cases where peeling cannot be performed, and in such cases, using a sputtering ion source for depth analysis is effective. This document presents a case of qualitative analysis of organic substances at metal interfaces, either in thin films or as secondary contamination, in the depth direction. As a conclusion, the presence of organic substances was confirmed by detecting C-series ions. Additionally, it is sometimes possible to identify organic substances by comparing them with known standard samples.
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Analysis of the following fields: - Oxide semiconductors - Power devices - Optical devices - LSI and memory - Electronic components - Manufacturing equipment and parts
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