Observation of dislocations in GaN using the SEM-ECCI method.

Using the SEM-ECCI method, observation becomes possible with easy preprocessing! We will also introduce measurement examples of single crystal GaN.

Our company conducts dislocation observation of GaN using the SEM-ECCI method. In power semiconductors such as Gallium Nitride (GaN), dislocations present during manufacturing are considered factors that lead to decreased device performance and shortened lifespan. Dislocation observation in semiconductors is mainly performed using Transmission Electron Microscopy (TEM) or the Etch Pit method; however, using the SEM-ECCI method allows for observation with easy pre-treatment. [Measurement Example] - Sample: Single crystal GaN (wafer with GaN deposited on a sapphire substrate) - Surface Orientation: C-plane (0001) ±0.5° - GaN Film Thickness: 4.5 ± 0.5 μm - Measurement Conditions: Backscattering mode *For more details, please refer to the related links or feel free to contact us.

Contract measurement