Dislocations and steps (tiny steps) as well as small orientation differences in power semiconductors such as GaN can be observed.
In power semiconductors such as GaN, atomic-level defects affect performance degradation. By evaluating forward-scattered electrons using an EBSD detector, it becomes possible to observe dislocations as well as steps (small height differences) and micro-orientation differences.
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basic information
When observing reflection electron images with SEM, backscattered electrons are generally used. In contrast, when using forward scattered electrons with a detector attached to EBSD, images different from the conventional ones can be obtained. Single crystal GaN was evaluated using three methods: backscattered electrons, EBSD, and forward scattered electrons. In addition to dislocations, it became possible to observe steps (small height differences) and small orientation differences.
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Observation of atomic-level defects affecting the performance degradation of power semiconductors such as GaN.
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Daitō Analysis Research has been advancing the establishment of an advanced think tank based on highly reliable analysis and analytical techniques accumulated in various material fields, as well as the challenges received from a wide range of industry customers. We aim to solve our customers' various issues with the least cost and the shortest delivery time. Moving forward, we would like to support our customers' research and development using the latest equipment and advanced manpower, and assist in creating products that enrich the future.
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