APSYS: A semiconductor device simulator capable of analyzing and designing solar cells.

basic information

<Interface> ■Standard tools for structural input and result display ■Can be executed from a GUI or command line, written in a proprietary scripting language ■Program control is possible using batch files or scripting languages <Material Macro> ■Compounds (InGaAsNSb, AlGaAsSb, InAs, InAlAs, InP, InGaAlAs, etc.) ■Nitrides (GaN, InGaN, AlGaN, c-GaN (hexagonal), c-AlN (hexagonal), etc.) ■Silicon (poly, SiGe, h-SiC (hexagonal), a-Si (amorphous), SiO2, etc.) ■Metals (metal (general-purpose), ITO, Cu, Ag, Fe, Zn, Cd, Al, Sn, Pb, etc.) ■Insulators (air, vacuum, TiO2, AlAs-oxide, sapphire, etc.) ■Organics (BPhen, BCzVBi doped CBP, CuPc, LiF, etc.) ■Others (GaP, CdS, ZnTe, ZnSe, ZnS, etc.)

Price information

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Applications/Examples of results

<Applicable Devices and Models> ■Solar Cells ■Light Detectors ■Silicon (Diodes, JFETs, NPN Bipolar, TFTs) ■CCD, CIS ■FDTD (2D/3D Lens, Light Detectors) ■HBT ■HEMT, FET ■LED (GaN MQW, QDot, OLED, RCLED) ■Mixed Device and Circuit Simulation ■NAND Flash Memory ■Nanowires ■NEGF (FINFET, HEMT, Nanowire, NMOS) ■QWIP ■MESFET ■RTD ■Schottky Tunneling ■Photonic Crystals ■Tunnel Junctions ■Type II Quantum Well Light Detectors ■Thermal Analysis etc. <Analysis and Plotting> ■Spatial Distribution of Physical Quantities (Potential, Carrier Density, Current Distribution, Band Diagrams, Light Mode Distribution, Temperature Distribution, Wave Functions of Multi-Quantum Wells, etc.) ■Bias Dependence (L-I Characteristics, I-V Characteristics, Current and Gain, Current and Refractive Index Changes, etc.) ■Spectra (Mode Gain, Spontaneous Emission, Refractive Index Changes, etc.) ■AC Analysis (Frequency Characteristics, Response Output, etc.)