Achieves low RDS(on) to maximize the effective use of package space.
The "FMG50AQ120N6" is a SiC MOSFET in a TO-247-4L package (insulated). It achieves reduced wiring resistance and strong bonding through double-sided solder bonding. It has a built-in freewheeling diode (FWD) function, providing high noise resistance. It is suitable for industrial inverters, uninterruptible power supplies (UPS), and various switching power supplies. Please feel free to contact us if you have any inquiries. 【Features】 ■ Compact and highly reliable ■ No external FWD required ■ High short-circuit withstand capability ■ Low on-resistance at high temperatures ■ High noise resistance *For more details, please download the PDF or feel free to contact us.
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【Maximum Ratings (Excerpt)】 ■ Drain-Source Voltage ・Symbol: VDSS ・Unit: V ・Rated Value: 1200 *For more details, please download the PDF or feel free to contact us.
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【Applications】 ■Industrial Inverters ■Uninterruptible Power Supplies (UPS) ■Various Switching Power Supplies *For more details, please download the PDF or feel free to contact us.
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Mori Electronics Industry Co., Ltd. was established in 1966 as a subsidiary of Shindengen Electric Manufacturing Co., Ltd. Since then, we have worked as a specialized trading company connecting customers and manufacturers, striving for the stable supply of not only semiconductors but also electronic components and devices. In order to respond to the increasingly growing market needs, we aim to provide total solution services with meticulous sales and marketing capabilities. As corporate social responsibility (CSR) has become a constant topic of discussion, what is now required of companies is not just to make production activities efficient. To fulfill corporate responsibilities towards the environment, including measures against global warming and the effective use of energy resources, Mori Electronics Industry will continue to challenge itself with gratitude in our hearts, aiming to become a next-generation value-creating trading company.