From in-vehicle systems to communication devices, for power semiconductors, choose Cystech.
**Company Overview** Cystech Electronics Corp. is a power semiconductor manufacturer established in Taiwan in 2002. The company focuses on products such as MOSFETs, transistors, diodes, and ICs, and has obtained certifications including ISO9001, ISO14001, and ISO45001. It is listed on the Taiwan Stock Exchange and provides high-reliability, high-performance products for the global market. **Main Products** MOSFETs (from low voltage to high voltage, including high-speed types) Transistors (bipolar, digital) Diodes (switching, Zener, Schottky) **Strengths and Reliability** Established a manufacturing and assembly production network in Taiwan, Japan, and China Implemented a strict quality assurance system and reliability evaluation framework Continuous improvement process utilizing customer feedback
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basic information
【MOSFET】 ■ Types: LV MOSFET (Low Voltage) MV MOSFET (Medium Voltage) HV MOSFET (High Voltage) High-Speed MOSFET (High-Speed Type) Specification Trends: Current range: 10A to 1000A, Voltage range: up to 900V and above Package Types: TOLL, DIP, SMT, etc. 【Transistors (BJT / Digital)】 Bipolar Junction Transistor (BJT) Digital Transistor Package Examples: SOT, TO, DFN, and various others 【Diodes】 ■ Types: Zener Diode Schottky Diode Switching Diode Features: High-speed switching capability, low VF, suitable for power circuits and rectifier circuits.
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Information and communication DC fan and motor Display monitor Power supply In-vehicle equipment Audio equipment, etc.
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| Model number | overview |
|---|---|
| MTB040P10RJ3 | [MOSFET] Package: TO-252 Channel Type: P-Channel Breakdown Voltage (BVDSS): -100V Drain Current (ID): -25A Gate-Source Voltage (Vgs): ±20V RDS(ON)@10V: 52mΩ (38mΩ) Input Capacitance (Ciss): 1420pF Gate Charge (Qg): 25nC Gate-Drain Charge (Qgd): 4.4nC |
| MTB090N10KRJ3 | [MOSFET] Package: TO-252 Channel Type: N-Channel Breakdown Voltage (BVDSS): 100V Drain Current (ID): 10A Gate-Source Voltage (Vgs): ±20V (ESD) RDS(ON)@10V: 98mΩ (75mΩ) Input Capacitance (Ciss): 253pF Gate Charge (Qg): 6nC Gate-Drain Charge (Qgd): 1.3nC |
| MTB035P06RV8 | [MOSFET] Package: DFN3×3 Channel Type: P-Channel Breakdown Voltage (BVDSS): -60V Drain Current (ID): -12A Gate-Source Voltage (Vgs): ±20V (ESD) RDS(ON)@10V: 44mΩ (34mΩ) Input Capacitance (Ciss): 1090pF Gate Charge (Qg): 19nC Gate-Drain Charge (Qgd): 3.2nC |
| BAS299N3 | [Diode] Package: SOT-23 Repetitive Peak Reverse Voltage (VRRM): 110V Continuous Reverse Voltage (VR): 100V Maximum Continuous Forward Current (IF): 430mA Pin Configuration: 1. Anode 2. Cathode 3. Common Connection |
| BAV23CN3 | [Diode] Package: SOT-23 Repetitive Peak Reverse Voltage (VRRM): 250V Continuous Reverse Voltage (VR): 250V Maximum Continuous Forward Current (IF): 200mA Configuration: Common Cathode |
| BAS21C2 | [Diode] Package: SOD-523 Repetitive Peak Reverse Voltage (VRRM): 300V Continuous Reverse Voltage (VR): 300V Maximum Continuous Forward Current (IF): 250mA Configuration: Cathode |
| MBNN01S6R | [Transistor] Package: SOT-363 Configuration: N-Channel + BJT Breakdown Voltage (BVDSS): 60V Drain Current (ID): 0.2A Gate-Source Voltage (Vgs): ±20V (ESD) RDS(ON): 3Ω (1.3Ω) |
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Company information
Our company has deep expertise in analog semiconductors and can provide world-class semiconductor solutions. By replacing the digital semiconductors you are currently using with our developed analog semiconductors, we can achieve low voltage operation, low power consumption, cost reduction, and shorter delivery times. Additionally, we are capable of developing and manufacturing custom semiconductors tailored to your needs, and we also carry out PCB assembly and OEM manufacturing of finished products.