It is possible to provide rapid feedback for process development and defect analysis of semiconductor devices!
Secondary Ion Mass Spectrometry (SIMS) enables depth profiling analysis with high sensitivity and high mass resolution for all elements. Furthermore, our company has added automation features from sample introduction to analysis, allowing for high-precision automated measurements. As a result, we can provide rapid feedback for process development and defect analysis in semiconductor devices, where quick responses are required. 【Features】 ■ High sensitivity measurement: Capable of high sensitivity measurement of heavy elements such as Ag, In, and Sb. ■ High mass resolution measurement ・M/ΔM = ~10,000 ・Evaluation of contamination levels of P, Al, Fe, Ni, etc., in Si and SiO2. *For more details, please download the PDF or feel free to contact us.
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【Other Features】 ■Automatic measurement with high repeatability - No need to change samples, allowing for quick response times - Equipped with a fully automated storage chamber: automated sample transport system - Maximum number of measurable samples: 24 (continuous measurement) - Retractable Cs+ gun: automatic switching between Cs+/O2+ guns enables diverse analyses *For more details, please download the PDF or feel free to contact us.
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Our company offers contract analysis services. Since our establishment in August 2002, we have utilized reliable analysis and measurement technologies along with state-of-the-art equipment to provide optimal nano-level microfabrication, analysis, evaluation of reliability, environmental safety chemical analysis, and service solutions for a wide range of markets centered around semiconductors, liquid crystals, metals, and new materials. Please feel free to contact us if you have any requests.