Introducing XPS analysis using backside grinding technology!
We would like to introduce our "Impurity Analysis of the Gate Electrode/Oxide Film Interface." To investigate the distribution and bonding states of impurities at the gate electrode/gate insulating film interface, a depth resolution of less than 1 nm is required. In such cases, measurements from the backside (gate insulating film side) enable more reliable analysis. Since the detection depth of XPS is shallow, typically less than a few nm, the Si substrate portion is removed from the backside through polishing or wet etching before conducting XPS measurements. 【Information Obtained】 ■ Distribution and bonding states of impurities near the gate electrode/gate oxide film interface ■ Compositional changes near the gate electrode/gate oxide film interface ■ Band alignment, etc. *For more details, please download the PDF or feel free to contact us.
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basic information
【Sample Preparation to XPS Analysis Flow】 ■Adhere the sample surface to the substrate ■Thin the Si substrate (backside polishing) ■Wet etch the Si substrate ■XPS analysis *For more details, please download the PDF or feel free to contact us.
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Our company offers contract analysis services. Since our establishment in August 2002, we have utilized reliable analysis and measurement technologies along with state-of-the-art equipment to provide optimal nano-level microfabrication, analysis, evaluation of reliability, environmental safety chemical analysis, and service solutions for a wide range of markets centered around semiconductors, liquid crystals, metals, and new materials. Please feel free to contact us if you have any requests.
