Gate drive for high-side MOSFET, perfect for audio amplifiers!
It has high voltage resistance and low output capacity, making it ideal for audio equipment such as gate driving for high-side MOSFETs and discrete amplifiers with high power supply voltage. The composite type ensures pairing of hFE and VBE by incorporating adjacent chips, allowing for application in differential amplifier circuits and current mirror circuits.
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basic information
TO-92S INA6006AS1 PNP, VCEO = 150V, IC = 100mA INC6006AS1 NPN, VCEO = 160V, IC = 100mA SOT-89 INA6006AP1 PNP, VCEO = 150V, IC = 100mA INA6006AP1 NPN, VCEO = 160V, IC = 100mA SC-59 INA6006AC1 PNP, VCEO = 150V, IC = 100mA INA6017AC1 PNP, VCEO = 150V, IC = 100mA INC6006AC1 NPN, VCEO = 160V, IC = 100mA INC6017AC1 NPN, VCEO = 160V, IC = 100mA SC-70 INA6017AM1 PNP, VCEO = 150V, IC = 100mA INC6017AC1 NPN, VCEO = 160V, IC = 100mA SC-88 RT3A66M PNP VCEO = 150V, IC = 100mA, hFE ratio = 1.0 (Typ) ΔVBE = 0mV (Typ) RT3C66M NPN, VCEO = 160V, IC = 100mA, hFE ratio = 1.0 (Typ) ΔVBE = 0mV (Typ)
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Applications/Examples of results
- High-side MOS gate drive - Discrete amplifier
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Company information
Isahaya Electronics began production of small signal transistors in 1973 and has evolved its semiconductor technology into design technologies for gate drivers and DC/DC converters. In recent years, the company has also focused on developing high-efficiency, high-power-factor power supply technologies to contribute to carbon neutrality. (Three-phase PFC, 1500V input compatible DC/DC converters, bidirectional converters, etc.) Meanwhile, to meet diverse needs, small signal transistors have also evolved with enhanced functionality and integration, expanding the lineup of high-voltage, high-current transistors, MOSFETs, and analog ICs.