Tungsten-titanium materials that can be used as diffusion barriers and adhesives for metal wiring in microchip gate circuits.
■ Purity: 99.95% ■ Density (19.3 g/cm³) ■ Manufacturing Method: Powder metallurgy *For more details, please download the PDF or feel free to contact us.*
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basic information
■Actual density>90.0% ■No voids on the surface or inside ■W, Ti ratio tolerance: +/-0.5wt% ■Surface finish<Ra1.6a ■Side C processing may be possible *For more details, please download the PDF or feel free to contact us*
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Applications/Examples of results
Used as a diffusion barrier and adhesive for metal wiring in microchip gate circuits, suitable for high-quality thin film formation to suppress particle generation at high density, and used as a barrier layer in CIGS (copper, indium, gallium, selenium) thin-film solar cells, utilized in various high-performance thin film coatings.
Company information
Our company has established a close cooperative relationship with Suzhou Techno-Tech Optoelectronic Materials Co., Ltd., a Japanese-affiliated company with a local factory in China that boasts world-class technology in sputtering targets and bonding services, along with engineers who have many years of experience. We are pursuing further evolution together. Through this collaboration, we propose high-quality and cost-effective products and services. We accurately capture customer needs and provide suitable and top-level products and services. Additionally, we offer cutting-edge products and technologies in semiconductor equipment, materials, and metal products through our extensive network cultivated over many years. Our company aims to support the development of our customers' businesses and grow together, maximizing creativity and technical capabilities to provide new value to our customers.

