1～7 件を表示 ／ 全 7 件
High-speed switching device, high-speed recovery rectifier device
1. Switching speed in the +1 second range 2. Rectification speed in the +1 second range 3. IGBT up to 2500V 4. Insulated heat dissipation type package 5. High-speed driver in the 45MHz range
GSA75AA120 IGBT module
- Compact, high-reliability package Standard SOT-227 package with compact high reliability - Direct mounting to heat sinks is possible - Insulation withstand voltage of 2500V - RoHS compliant - Excellent high-speed performance (40~70kHz) Equipped with IGBT chips specialized for high-speed performance and high-speed diodes optimally designed for IGBTs.
Insulation withstand voltage 2500V! A module that uses IGBTs specialized for high-speed performance.
The "GSA75AA120" is an IGBT module compliant with UL standards. It comes in a compact, highly reliable SOT-227 standard package. It features an IGBT specialized for high-speed performance, along with a high-speed diode designed to match the IGBT. Additionally, it can be directly mounted to a heat sink. Please feel free to contact us if you have any inquiries. 【Features】 ■ Excellent high-speed performance (40kHz to 70kHz) ■ Compact and highly reliable package *For more details, please download the PDF or feel free to contact us.
New Gen5 IGBT optimized for low, medium, and high-speed switching applications.
The "650V XPT Gen5 Discrete IGBT" is a product developed using unique XPT thin wafer technology and a new fifth-generation trench IGBT process. It features low thermal resistance, minimal energy loss, high-speed switching capability, low tail current, and high current density. Additionally, it has low gate charge, which helps reduce gate drive requirements. 【Benefits】 - Provides optimized switching classes A4, B4, and C4 to meet the switching frequency requirements of various applications. - Reduction in gate charge Qg decreases gate driver requirements. - Positive VCE(SAT) temperature coefficient facilitates parallel usage. - High power density with a maximum collector current capability of 220A at TC = 110℃. *For more details, please download the PDF or feel free to contact us.
Reducing the thermal resistance RthJC can simplify thermal design.
The "1200V XPT Gen4 Trench Discrete IGBT" is a new Gen4 IGBT optimized for low, medium, and high-speed switching applications. These 1200V devices, equipped with XPT thin wafer technology and the fourth-generation trench IGBT process, contribute to reducing gate drive requirements and conduction losses. They also feature low thermal resistance, low losses, and high current density. Furthermore, the positive temperature coefficient of the collector-emitter voltage allows for the parallel use of multiple devices. 【Benefits】 - Provides optimized switching classes A4, B4, and C4 to meet the switching frequency requirements of each application. - Reduces gate driver requirements due to decreased gate charge Qg. - Facilitates parallel use due to the positive VCE(SAT) temperature coefficient. - High power density with a maximum collector current capability of 140A at TC = 110°C. - Simplifies thermal design by reducing thermal resistance RthJC. *For more details, please download the PDF or feel free to contact us.
