Last Updated： Aggregation Period:Feb 18, 2026～Mar 17, 2026
This ranking is based on the number of page views on our site.
Last Updated： Aggregation Period:Feb 18, 2026～Mar 17, 2026
This ranking is based on the number of page views on our site.
Last Updated： Aggregation Period:Feb 18, 2026～Mar 17, 2026
This ranking is based on the number of page views on our site.
1～30 item / All 37 items
High-speed switching device, high-speed recovery rectifier device
1. Switching speed in the +1 second range 2. Rectification speed in the +1 second range 3. IGBT up to 2500V 4. Insulated heat dissipation type package 5. High-speed driver in the 45MHz range
High Voltage Module
DYNEX's IGBT modules can handle large currents, with options available up to 3600A, and they also offer 20 types of fast recovery diode modules used as freewheeling diodes in IGBT inverters. The production line features a wide variety of options, including single switches, choppers, dual-pack configurations, half-bridges, and bidirectional (matrix type) designs. In terms of functionality, they provide various types including standard, trench gate (low loss), and soft punch-through (high reliability).
![[Business Introduction] Sales of power semiconductors manufactured by Dynex in the UK.](https://image.mono.ipros.com/public/product/image/3ec/2000315075/IPROS87080182840220393533.jpeg?w=280&h=280)
Introducing Dynex Semiconductor Ltd, a power semiconductor manufacturer from the UK.
We are engaged in the sale of power semiconductors manufactured by Dynex in the UK. Dynex is a power semiconductor manufacturer headquartered in Lincoln, UK. They provide a complete production process from chip manufacturing to assembly and testing. They handle bipolar products such as diodes, FRDs, thyristors, and GTOs, as well as IGBTs and power semiconductor stacks. 【Main Products】 ■ IGBT Modules ■ FRD Modules ■ General Rectifier Flat Thyristors ■ GTO Thyristors (Flat) ■ Symmetrical Bypass Thyristors (Flat) For bipolar products like thyristors, diodes, and GTOs, they offer a product lineup that covers high power up to 11,000A in current and 8,500V in voltage. IGBT and FRD modules are produced in-house from silicon wafers to packaging, with a lineup of high-voltage classes up to 6,500V. *For more details, please feel free to contact us.
Insulation withstand voltage 2500V! A module that uses IGBTs specialized for high-speed performance.
The "GSA75AA120" is an IGBT module compliant with UL standards. It comes in a compact, highly reliable SOT-227 standard package. It features an IGBT specialized for high-speed performance, along with a high-speed diode designed to match the IGBT. Additionally, it can be directly mounted to a heat sink. Please feel free to contact us if you have any inquiries. 【Features】 ■ Excellent high-speed performance (40kHz to 70kHz) ■ Compact and highly reliable package *For more details, please download the PDF or feel free to contact us.
Compact, high-reliability SOT-227 standard package! Direct mounting to heat sinks is possible.
We would like to introduce our IGBT module, 'GSA100AA60'. By adopting our proprietary dedicated IGBT chip, we have achieved a low Vce(sat) of 1.21V Typ at 125℃. It is well-suited for applications such as bypass AC switches in uninterruptible power supplies (UPS) and pulse power supplies for surface treatment. Please feel free to contact us when you need assistance. 【Features】 ■ Pursuit of low loss in low switching frequency range ■ Compact and highly reliable package *For more details, please download the PDF or feel free to contact us.
![[Analysis Case] Evaluation of Si-based IGBT Chip Cross-section by Low-Temperature Micro Photoluminescence Analysis](https://image.mono.ipros.com/public/product/image/3c5/2000329659/IPROS1371167197596247742.jpg?w=280&h=280)
It is possible to confirm the influence of the lifetime killer from the cross-sectional direction.
IGBT (Insulated Gate Bipolar Transistor) is used in various products as a power semiconductor module, ranging from home appliances to industrial equipment. Lifetime control is implemented for performance improvement in IGBTs, but this control is achieved by creating defects (lifetime killers) in the drift layer. By conducting low-temperature micro-PL analysis from the cross-section, it is possible to gain insights into lifetime killers.
Optimal for high voltage and high current applications. Current lead time is 24 weeks. [IGBT]
BOURNS has released an IGBT that combines a gate input with a MOS structure and a bipolar power transistor functioning as an output switch. By adopting TGFS technology, it achieves operational characteristics that reduce the collector-emitter saturation voltage V CE(sat) and minimize switching losses. For sample requests, please feel free to contact Seiwa, the authorized distributor.
