Last Updated： Aggregation Period:Jul 23, 2025～Aug 19, 2025
This ranking is based on the number of page views on our site.
Last Updated： Aggregation Period:Jul 23, 2025～Aug 19, 2025
This ranking is based on the number of page views on our site.
Last Updated： Aggregation Period:Jul 23, 2025～Aug 19, 2025
This ranking is based on the number of page views on our site.
1～15 item / All 36 items
High-speed switching device, high-speed recovery rectifier device
1. Switching speed in the +1 second range 2. Rectification speed in the +1 second range 3. IGBT up to 2500V 4. Insulated heat dissipation type package 5. High-speed driver in the 45MHz range
High Voltage Module
DYNEX's IGBT modules can handle large currents, with options available up to 3600A, and they also offer 20 types of fast recovery diode modules used as freewheeling diodes in IGBT inverters. The production line features a wide variety of options, including single switches, choppers, dual-pack configurations, half-bridges, and bidirectional (matrix type) designs. In terms of functionality, they provide various types including standard, trench gate (low loss), and soft punch-through (high reliability).
![[Business Introduction] Sales of power semiconductors manufactured by Dynex in the UK.](https://image.mono.ipros.com/public/product/image/3ec/2000315075/IPROS87080182840220393533.jpeg?w=280&h=280)
Introducing Dynex Semiconductor Ltd, a power semiconductor manufacturer from the UK.
We are engaged in the sale of power semiconductors manufactured by Dynex in the UK. Dynex is a power semiconductor manufacturer headquartered in Lincoln, UK. They provide a complete production process from chip manufacturing to assembly and testing. They handle bipolar products such as diodes, FRDs, thyristors, and GTOs, as well as IGBTs and power semiconductor stacks. 【Main Products】 ■ IGBT Modules ■ FRD Modules ■ General Rectifier Flat Thyristors ■ GTO Thyristors (Flat) ■ Symmetrical Bypass Thyristors (Flat) For bipolar products like thyristors, diodes, and GTOs, they offer a product lineup that covers high power up to 11,000A in current and 8,500V in voltage. IGBT and FRD modules are produced in-house from silicon wafers to packaging, with a lineup of high-voltage classes up to 6,500V. *For more details, please feel free to contact us.
Xiner was established in 2013.
Xiner was established in 2013 and has received joint investment from well-known institutions such as Shenzhen Zhengyuan Technology, Shenzhen State-owned Assets Supervision and Administration Commission, Shenzhen Talent Innovation Fund, Dachen Venture Capital, Fangguang Capital, and Xiamen Falcon. We focus on the development, application, and sales of IGBT chips, IGBT driver chips, and high-power intelligent power modules. Xiner has an experienced and practical team, with key personnel accumulating over 10 years of industry experience and successfully achieving mass production of IGBT products based on FST technology for the first time in China. Xiner has research and development centers in Shanghai and Shenzhen, and has established sales offices in Shenzhen, Shanghai, Qingdao, Shunde, and Hangzhou to respond quickly to customer needs. Xiner adheres to a business philosophy of application-oriented research and development and open cooperation. We deeply explore customer application requirements, focus on the research and development and design of IGBT-related products, and collaborate with the best partners in the industry to provide customers with the most stable and cost-effective power devices.
Reducing the thermal resistance RthJC can simplify thermal design.
The "1200V XPT Gen4 Trench Discrete IGBT" is a new Gen4 IGBT optimized for low, medium, and high-speed switching applications. These 1200V devices, equipped with XPT thin wafer technology and the fourth-generation trench IGBT process, contribute to reducing gate drive requirements and conduction losses. They also feature low thermal resistance, low losses, and high current density. Furthermore, the positive temperature coefficient of the collector-emitter voltage allows for the parallel use of multiple devices. 【Benefits】 - Provides optimized switching classes A4, B4, and C4 to meet the switching frequency requirements of each application. - Reduces gate driver requirements due to decreased gate charge Qg. - Facilitates parallel use due to the positive VCE(SAT) temperature coefficient. - High power density with a maximum collector current capability of 140A at TC = 110°C. - Simplifies thermal design by reducing thermal resistance RthJC. *For more details, please download the PDF or feel free to contact us.
New Gen5 IGBT optimized for low, medium, and high-speed switching applications.
The "650V XPT Gen5 Discrete IGBT" is a product developed using unique XPT thin wafer technology and a new fifth-generation trench IGBT process. It features low thermal resistance, minimal energy loss, high-speed switching capability, low tail current, and high current density. Additionally, it has low gate charge, which helps reduce gate drive requirements. 【Benefits】 - Provides optimized switching classes A4, B4, and C4 to meet the switching frequency requirements of various applications. - Reduction in gate charge Qg decreases gate driver requirements. - Positive VCE(SAT) temperature coefficient facilitates parallel usage. - High power density with a maximum collector current capability of 220A at TC = 110℃. *For more details, please download the PDF or feel free to contact us.
