【BOURNS】Industry-leading high power efficiency and low switching loss.
Optimal for high voltage and high current applications. Current lead time is 24 weeks. [IGBT]
BOURNS has released an IGBT that combines a gate input with a MOS structure and a bipolar power transistor functioning as an output switch. By adopting TGFS technology, it achieves operational characteristics that reduce the collector-emitter saturation voltage V CE(sat) and minimize switching losses. For sample requests, please feel free to contact Seiwa, the authorized distributor.
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<Features> - Discrete IGBT integrated with FRD - Advanced Trench Gate Field Stop (TGFS) technology - Low saturation voltage drop (V CE(sat)) - Low switching loss - TO252, TO 247, TO247N packages - RoHS compliant - JEDEC standard compliant
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Applications/Examples of results
■Application - Switching power supply - PFC - Induction cooker (IH) - Uninterruptible power supply (UPS) - Solar inverter (home equipment) - Rice cooker, etc.
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