Imaging SIMS enables the evaluation of localized elements.
We disassembled a commercially available SiC power MOSFET and conducted imaging SIMS measurements to evaluate the concentration distribution of the dopant elements Al, N, and P in a 20 µm square area to a depth of 0.5 µm. We will present a case where we extracted the depth profile concentration distribution of Al, N, and P localized within the sample surface from the data processing after the imaging SIMS measurements.
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For detailed data, please refer to the catalog.
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Applications/Examples of results
Analysis of power devices.
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Download All Catalogs![[Analysis Case] Evaluation of Dopants in SiC Power MOSFETs Using SIMS_C0249](https://image.mono.ipros.com/public/catalog/image/01/12a/333691/IPROS695027548296713044.jpg?w=120&h=170)
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MST is a foundation that provides contract analysis services. We possess various analytical instruments such as TEM, SIMS, and XRD to meet your analysis needs. Our knowledgeable sales representatives will propose appropriate analysis plans. We are also available for consultations at your company, of course. We have obtained ISO 9001 and ISO 27001 certifications. Please feel free to consult us for product development, identifying causes of defects, and patent investigations! MST will guide you to solutions for your "troubles"!