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MOSFET(抵抗) - List of Manufacturers, Suppliers, Companies and Products

Last Updated： Aggregation Period:Jan 14, 2026～Feb 10, 2026
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MOSFET Product List

31～47 item / All 47 items

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Super Junction MOSFET

Super Junction MOSFET

Power MOSFET with a high voltage rating of over 600V! This device features low on-resistance and ultra-low gate charge using MEMS technology.

The "Super Junction MOSFET" is our power MOSFET that utilizes high-voltage super junction technology. By combining silicon MOSFETs with MEMS process technology, we deliver world-class best-in-class performance. We have developed unique manufacturing technology using MEMS technology, and by expanding to smaller dimensions, we provide high-performance and cost-effective MOSFETs. 【Features】 ■ High voltage resistance of over 600V ■ High dv/dt resistance ■ High avalanche characteristics ■ High peak current characteristics ■ Enhanced mutual conductance characteristics, etc. *For more details, please download the PDF or contact us.

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ICE15S60FP 15A,600V POWER MOSFET

ICE15S60FP 15A,600V POWER MOSFET

GEN2 Series 15A, 600V GEN2 Super Junction MOSFET

The ICE15S60FP from IceMOS Technology is a TO220 Full Pak package rated for 15A and 600V. It has a low Qg, contributing to energy savings! 【Features】 ■ TO220 Full Pak package ■ Low on-resistance ■ Ultra-low gate charge ■ High dv/dt withstand capability ■ High UIS characteristics ■ High peak current tolerance ■ Enhanced transconductance performance

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MOSFET R9 Series

MOSFET R9 Series

High-reliability MOSFETs (Hermetic MOSFETs) for aerospace and defense equipment, and radiation-resistant MOSFETs for space equipment.

We offer a wide variety of discrete products in different package types for defense, aerospace, and space equipment, tailored to your applications and specifications. Features of the R9 Series - Released the R9 series utilizing Super Junction Technology - Significant improvement in performance metric FoM (on-resistance RDSON × charge Qg) - Enhanced resistance to Single Event Effects (SEE) - Packages include surface mount (SMD-0.2, SMD-0.5, SMD-2) and through-hole (TO-254, TO-257), as well as support for SupIR SMD-2 *Comparison [Conventional Products] [R9 Series] - RDS(ON) = 30 (mΩ) - RDS(ON) = 18 (mΩ) - Qg = 45 (nC) - Qg = 45 (nC) - ID = 22 (A) - ID = 40 (A) *For more details, please refer to the catalog or feel free to contact us.

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Latest Power Solution Product Lineup【Cystek】

Latest Power Solution Product Lineup【Cystek】

Product introduction of power MOSFET products for power supply applications.

【BOOST MOS】 Application: Boost-type DC-DC converters, etc. Package: TO-252, TO-220FP Voltage Rating: 100V to 250V Features: Low R<sub>DS(ON)</sub>, high current capability, low Qg 【BUCK MOS】 Application: Buck-type DC-DC converters Package: TO-220FP Features: Ultra-low on-resistance (5.3mΩ and above) 【SR MOS (Synchronous Rectification MOSFET)】 Application: Efficiency improvement in rectification stages Features: High-speed switching, low Qg 【Power Saving MOS】 For ultra-low current applications (e.g., 0.033A class) Compact SOT-23 package 【Power Switch MOS】 Application: ON/OFF control for power lines Package: Various including DFN3x3, SOP-8 Features: Low on-resistance, high current control capability 【Signal Switch MOS】 For low current and low voltage switching applications Supports ultra-compact packages (such as SOT-23) 【GaN/SiC WBG Devices】 GaN HEMT and SiC SBD (Schottky Barrier Diode) High voltage products planned, such as 650V class

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ICE8S65FP 8A,650V POWER MOSFET

ICE8S65FP 8A,650V POWER MOSFET

Mass production release starting January 2023! GEN2 Super Junction MOSFET

The ICE8S65FP from Ice Moss Technology is an 8A, 650V TO220 Full Pak package. It has low Qg and contributes to energy savings! 【Features】 ■ TO220 Full Pak package ■ Low on-resistance ■ Ultra-low gate charge ■ High dv/dt resistance ■ High UIS characteristics ■ High peak current resistance ■ Enhanced mutual conductance performance

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MOS FET Single N-Channel (ELM43400CB)

MOS FET Single N-Channel (ELM43400CB)

[Recommended] This is a high-current MOSFET with characteristics of low input capacity, low voltage operation, and low ON resistance.

The single power MOSFET series is a high-current MOSFET with characteristics of low input capacitance, low voltage drive, and low ON resistance. The single N-channel ELM43400CB is a high-current MOSFET with the same characteristics of low input capacitance, low voltage drive, and low ON resistance. Some products are ESD resistant due to protective circuits. Please check our website for more information. *For more details on the 43400CB, please refer to the catalog or feel free to contact us.

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MOS FET Single P-Channel (ELM43401CA)

MOS FET Single P-Channel (ELM43401CA)

[Recommended] This is a high-current MOSFET with characteristics of low input capacitance, low voltage drive, and low ON resistance.

The single power MOSFET series is a high-current MOSFET with characteristics of low input capacitance, low voltage drive, and low ON resistance. The single P-channel ELM43401CA is a high-current MOSFET with the same characteristics of low input capacitance, low voltage drive, and low ON resistance. Some products are ESD resistant due to protective circuits. Please check our website. *For more details on the 43401CA, please refer to the catalog or feel free to contact us.

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[Data] Shirutoku Report No. 53 #Avalanche Test (2)

[Data] Shirutoku Report No. 53 #Avalanche Test (2)

Explaining the transient thermal resistance of devices using diagrams! Calculations will be performed using a MOSFET with appropriate parameters as an example.

★★Shirutoku Report: Useful Information You Should Know★★ This report is a continuation of the avalanche rating test of MOSFETs discussed in Shirutoku Report No. 52. We will explain the relationship between the device's transient thermal resistance and the losses and time during avalanche operation using diagrams and graphs. When selecting a device, comparing devices measured under different conditions is not very meaningful. It is recommended to measure in an environment as close to actual operation as possible, rather than relying solely on data sheet values. 【Contents】 ■ Transient thermal resistance of the device ■ Relationship between losses and time during avalanche operation ■ Graph of Tj and time *For more details, please refer to the PDF document or feel free to contact us.

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ICE20N60B 20A, 600V POWER MOSFET

ICE20N60B 20A, 600V POWER MOSFET

★Please inquire about stock! This is a power MOSFET that contributes to power management and energy saving, with a proven track record in power supply manufacturers.

The ICE20N60B from Ice Moss Technology is a TO263-2L, D2PAK package rated for 20A and 600V. 【Features】 ■ TO263-2L (D2PAK) package ■ Low on-resistance ■ Ultra-low gate charge ■ High dv/dt withstand capability ■ High UIS characteristics ■ High peak current capability ■ Enhanced transconductance performance

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Active clamp type MOSFET

Active clamp type MOSFET

Optimal for driving inductive loads. Freewheeling diodes can be reduced!

It has a built-in Zener diode for active clamp between the gate and drain, which protects the MOSFET from back electromotive force during motor and solenoid drive operations through active clamp operation. This eliminates the need for a freewheeling diode for regenerative back electromotive force. Additionally, it also has a built-in bias resistor, contributing to the reduction of peripheral components.

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