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Simulator Product List and Ranking from 45 Manufacturers, Suppliers and Companies

Last Updated： Aggregation Period:Sep 17, 2025～Oct 14, 2025
This ranking is based on the number of page views on our site.

Simulator Manufacturer, Suppliers and Company Rankings

Last Updated： Aggregation Period:Sep 17, 2025～Oct 14, 2025
This ranking is based on the number of page views on our site.

  1. null/null
  2. タナック 岐阜本社 Gifu//Medical and Welfare
  3. アイロック 本社 Aichi//Automobiles and Transportation Equipment
  4. 4 Comet Technologies Japan K.K. Comet Yxlon Kanagawa//Testing, Analysis and Measurement
  5. 5 エムティエスジャパン Tokyo//Testing, Analysis and Measurement
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Simulator Product ranking

Last Updated： Aggregation Period:Sep 17, 2025～Oct 14, 2025
This ranking is based on the number of page views on our site.

  1. Factory Layout Simulator
  2. X-ray reflow simulator Comet Technologies Japan K.K. Comet Yxlon
  3. [Case Study] Toyota Motor Corporation Driving Simulator エムティエスジャパン
  4. 4 [Demo unit available] LED Solar Simulator LumiSun-50 オプトシリウス
  5. 5 T3R simulator アイロック 本社

Simulator Product List

61～75 item / All 387 items

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High-Power SCOWL Laser Simulator

High-Power SCOWL Laser Simulator

Analysis tool for slab-coupled waveguide lasers.

The temperature dependence of the mechanism of refractive index change using the Kramers-Kronig equations and the free electron/plasma model yields reasonable results. LASTIP provides an accurate estimate of the transverse mode behavior in SCOWL-type high-power lasers. For more in-depth analyses, such as those involving long resonators, it is recommended to use PICS3D, as it is necessary to consider longitudinal spatial hole burning and facet optical damage effects.

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Quantum Cascade Laser Simulator

Quantum Cascade Laser Simulator

Quantum Cascade Laser Analysis Tool

Subband structure calculation enables the fundamental design of quantum cascade lasers (QCL), such as emission wavelength and miniband alignment. A microscopic rate equation model easily generates optical gain, such as local current and photon density. In macroscopic QCL simulations, electrons are injected from the electrodes into the multiple quantum wells (MQW) and collected from the MQW back to the electrodes. A non-local current injection model is proposed with a mean-free-path of 100-1000 Å.

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Half-polar InGaN semiconductor laser simulator

Half-polar InGaN semiconductor laser simulator

Analysis tool for semi-polar InGaN semiconductor lasers

Introducing a modeling approach that considers crystal coordinate systems, strain, and stress. Using 2D calculations in LASTIP as an example, comparing optical gain without internal electric fields between semi-polar, non-polar, and c-plane. A model based on k.p. theory for wurtzite-type MQW devices considering crystal growth direction is implemented in APSYS, LASTIP, and PICS3D.

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3D simulator for light, electricity, and heat

3D simulator for light, electricity, and heat

Three-dimensional analysis tool for multimode optical interference waveguide semiconductor lasers.

Simulation of the emission characteristics, electrical characteristics, and thermal analysis of multimode interference (MMI) semiconductor lasers. Introduction of the physical model. Explanation of the simulation procedure from mask creation to three-dimensional simulation. Discussion of considerations to be taken into account in the design of MMI devices.

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3D simulator for CMOS image sensors

3D simulator for CMOS image sensors

CMOS image sensor 3D analysis tool

Introducing the features of Crosslight's TCAD and 3D simulation. Additionally, explaining the characteristics of MaskEditor and SemiCrafter, which are tools for constructing 3D structures. To conduct actual simulations, an overview of the CMOS image sensor process is provided, along with explanations of the tasks for each step.

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Quantum well type infrared sensor device simulator

Quantum well type infrared sensor device simulator

Analysis tool based on a self-consistent model of quantum well infrared sensors.

Crosslight's APSYS can provide a comprehensive physical model for the analysis of QWIP (Quantum Well Infrared Photodetectors) devices. The validity of the model is sufficiently reasonable when compared to experimental results. Non-local quantum corrections to the drift-diffusion theory are necessary to explain the photo-carrier extraction in the properties of QWIPs.

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Non-equilibrium Green's function calculation simulator for nano-wire MOSFETs

Non-equilibrium Green's function calculation simulator for nano-wire MOSFETs

Analysis tool using nonequilibrium Green's function calculations for nanowire MOSFETs.

Introducing the features of a physical model for analyzing nano-wire MOSFETs. A cylindrical coordinate system is used to maximize simulation efficiency. A hybrid approach utilizing NEGF (Non-Equilibrium Green's Function) in the channel region and standard drift-diffusion (DD) in other regions. Flexible selection of subbands including quantum confinement and quantum ballistic electron transport in NEGF. A self-consistent solution of the NEGF equations combined with all other drift-diffusion equations.

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SOI FinFET simulator using non-equilibrium Green's functions

SOI FinFET simulator using non-equilibrium Green's functions

3D analysis tool for SOI FinFET

An overview of the simulation flow for SOI FinFETs and the tools used therein is provided. An example of 3D process simulation using the process simulator CSupre is introduced. Based on the structural data created from the process simulation, the features of FinFET modeling in the device simulator APSYS, including quantum confinement, oxide layer dissolution, and quantum ballistic current transport models, along with analysis examples, are presented.

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3D simulation effect analysis simulator for MOSFETs

3D simulation effect analysis simulator for MOSFETs

Analysis tool for 3D simulation effects in MOSFETs.

In STI (shallow trench isolation) confined MOS, the SiO2/Si interface separation causes dopant diffusion in the width direction. For HV (high voltage) MOSFETs, 3D diffusion and narrow gate side fields shift the threshold voltage Vth downward as if reducing the width. In the typical process flow of nanoMOSFETs, reducing the width to W>0.1 um increases Vth. In square-trenched UMOS, the effects of geometry and 3D diffusion shift Vth downward as if reducing the square size.

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MOSFET substrate current simulator

MOSFET substrate current simulator

MOSFET substrate current analysis tool

This introduces a modeling example of NMOS (N-channel MOSFET) using the process simulator CSuprem. It also illustrates characteristic analysis using the CSuprem device simulator APSYS. Additionally, it obtains the substrate current characteristics of bell-shaped curves from simulations and compares them with experimental results.

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QW model simulator for Si strain

QW model simulator for Si strain

Analysis tool for quantum wells of strained MOSFETs.

The semi-classical quantum subband valley-averaged mobility model takes into account valley splitting and anisotropy. It allows for a self-consistent solution of the drift-diffusion equations with quantum corrections using the averaged subband density of states and mobility. The characteristics of silicon MOSFETs with various stresses and strains in crystal directions can be predicted.

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Mix Mode Simulator

Mix Mode Simulator

Simulation of mixed circuits and devices

Introducing the mixed mode of Crosslight that allows for simulation with a combination of circuits (SPICE) and devices. A brief explanation of the mechanism of circuit and device mixed simulations. An example of executing mixed mode and analyzing results using IGBT devices as a subject.

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Electric Field Absorption Modulator Simulator

Electric Field Absorption Modulator Simulator

Analysis tool for electric field absorption modulators

Simulated a waveguide modulator using the Franz-Keldysh effect with APSYS. Enhanced by dipole matrix elements obtained from many-body calculations, showing excellent agreement with experimental results. Free-carrier theory alone is insufficient to reproduce the experimental results. The simulation results for electric field, absorption, and transmission align well with the experimental results.

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Simulator for analyzing the effects of crystal orientation.

Simulator for analyzing the effects of crystal orientation.

A tool for analyzing the effect of crystal orientation on the optical properties of GaN substrate devices.

An explanation of crystal orientation and polarization. Introduction of physical models to explore the effects of crystal orientation, such as the k.p. method for analyzing quantum wells (QW) at arbitrary crystal orientations. Examples of results using InGaN/GaN QW, including a comparison of optical gain at different crystal orientations, the effects of crystal orientation on c-plane and m-plane, and a comparison of semiconductor laser diode (LD) performance through finite-element simulation.

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Band-to-band tunneling effect analysis simulator

Band-to-band tunneling effect analysis simulator

Analysis tool for the tunneling effect in heterojunctions.

The quantum tunneling model cannot ignore the impact on carrier transport at high doping levels. The change in aluminum composition grading allows for a pseudo quantum tunneling effect by flattening the potential barrier. However, the distance selection of the aluminum composition grading is crucial. By adding sufficiently many internal extra mesh points, effects similar to those of composition grading can be achieved. The quantum tunneling model is the most reliable method for enhancing carrier transport through quantum mechanics.

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