The wide bandgap, fast switching speed, and low on-resistance are also advantageous points!
We manufacture and sell "GaN substrates."
These substrates use GaN (gallium nitride), a semiconductor that became widely known as a material for blue light-emitting diodes. However, due to its high breakdown electric field strength and thermal conductivity, it has recently been applied as a material for advanced power semiconductors.
Please feel free to contact us when you need our services.
【Basic Specifications (Partial)】
■ Diameter: Φ2", Φ3", Φ4", Φ6"
■ GaN Film Thickness: 3μm, 3.5μm, 4μm, 4.5μm, 6μm, up to 100μm available upon special request
■ Crystal Orientation: C-axis (0001)
■ Conductivity Type: Un-Doped, N-type, P-type
■ XRD: (002) ≦ 300 arcsec, (102) ≦ 400 arcsec
*For more details, please refer to the PDF document or feel free to contact us.