16～29 item / All 29 items
Elements 4, 8, 12, and 16 are arranged as a linear array.
■Design with a 250um pitch to match fiber ribbons ■High-speed and low dark current support with an effective diameter of 80um ■Optical isolation of 50dB ■Compatible with O, S, C, and L bands
InGaAs Thermoelectric Cooled PD
■Single/Dual Stage TE Cooler ■Effective diameter: 0.3mm to 5mm ■High shunt resistance ■Low dark current / low leakage current ■High sensitivity ■Cut-off wavelengths: 1.7, 1.9, 2.05, 2.2, 2.6μm ■Standard package: TO-5, TO-8, TO-66 ■Custom package with fiber pigtail and SMA receptacle
Extended InGaAs PD
■Aperture: 0.3mm to 3mm ■Cut-off wavelengths: 1.9μm, 2.05μm, 2.2μm, 2.6μm ■High shunt resistance ■Various lens options available: biconvex lens, plano-convex lens, ball lens ■Package: TO-46, TO-18, TO-5
High Speed InGaAs PD
■Small diameter: 60μm to 300μm ■Cut-off wavelength: 1.7μm ■Low dark current for high sensitivity ■Low capacitance for high speed (2.5GHz) ■Package: Fiber pigtail, TO-46 with high reliability fiber pigtail, receptacle and sub-mount type
GPD Corporation is a global company that manufactures power and high-speed germanium transistors, diodes, and infrared photodetectors.
■Small diameter: 40μm ■Wavelength sensitivity range: 800nm to 1800nm ■Linear and Geiger mode operation ■High sensitivity ■High reliability fiber pigtail (single/multi-mode) ■Electronically coolable ■Various packages: TO-46, submount
GPD Corporation manufactures power and high-speed germanium transistors, diodes, and infrared photodetectors.
■Various sizes from small to large diameter: 100μm to 25mm ■Wavelength sensitivity range: 800nm to 1800nm ■High linearity: >10dBm ■Various lens options available: biconvex lenses, plano-convex lenses, and ball lenses ■Optical filters: density filters and bandpass filters ■Single and dual-stage electronic cooling available ■4-segment photodiode ■Dual-color (Si/Ge) sandwich photodiode ■Custom accessory packaging available: fiber pigtails, high-reliability pigtails, receptacles, and submounts ■Various packages: TO-46, TO-18, TO-5, TO-8, TO-9, BNC
◆ UV LED (UV-LED) ◆ 308nm, 325nm, 340nm ◆ Skin treatment, resin curing, sensing
**Bare Chip** This is a high-quality bare chip manufactured with outstanding technology. There are three chip sizes available, and an option for a sub-mount specification can also be selected. - Small (500μm×500μm) bare chip, Medium (750μm×780μm) bare chip, Large (1000μm×1000μm) bare chip *Please inquire as we can also supply it with a sub-mount attached.* **To Metal Can** This is a robust high-reliability (hermetic) specification using a metal can. The diameters available are φ5mm and φ9mm, and you can choose the beam angle from 6° to 145° (full angle). **Hermetic SMD** This product features an industry-standard size SMD package of 3.5mm×3.5mm, equipped with a medium chip or a large high-power chip in the 10mW class. - Middle Power SMD (Medium: equipped with a 750μm×750μm chip), High Power SMD (Large: equipped with a 1000μm×1000μm chip)
◆Driven under reverse bias conditions ◆Large diameter, square shapes also available ◆Low dark current ◆Silicon PIN photodiode ◆Peak wavelength approximately 940nm
■Spectral detection range: 400nm to 1100nm LD-PD has implemented an inspection system compliant with MIL-I-45208, and adheres to Telcordia test requirements (TA-NWT-00093) and MIL-STD-883 test methods. 【Parameters: Typical values, Symbols, Test conditions】 ● Round shape φ0.2 to φ8.0mm Detector size (mm): φ0.2, φ0.5, φ1, φ2, φ4, φ5, φ8 Response wavelength range (nm): 400 – 1100・λ Responsivity (A/W): 0.40, 0.45, 0.5, 0.5, 0.5, 0.5, 0.55・Re・VR=15V, λ=900nm Response time (nS): 2, 5, 6, 8, 15, 15, 25tr・VR=15V, RL=50Ω Dark current (nA): 1, 2, 3, 5, 12, 40, 60・ID・VR=15V Reverse voltage (V): 100・VB・IR=10μA Capacitance (pF): 0.8, 1.2, 2.0, 6, 20, 30, 70・Cj・f=1MHz, VR=15V Operating voltage (V): 0 to 15・VR Socket: Coaxial/TO-46/TO-5/TO-8 Saturation optical power: 0.3w/cm2
■Wide active area ■High sensitivity ■Strong durability ■Wide angle ■Chip on PCB
◆Medical Sensors◆Various Optical Sensors◆Four Selectable Patterns This is a photodiode for receiving light to measure SPO2 (arterial blood oxygen saturation). These photodiodes are incorporated into and used in smartphones, smartwatches, and medical devices. SJ SYSTEM is a specialized manufacturer of technology for measuring SPO2 (arterial blood oxygen saturation) with pulse oximeters, and it manufactures and sells LED modules, PD modules, and reflection modules for SPO2. These products are used in the healthcare field and are utilized in smartphones and smartwatches.
◆High-speed response ◆High bandwidth ◆Low noise ◆Low bias voltage ◆Hermetic TO package ◆Excellent sensitivity and high response device
◆Silicon Avalanche Photodiode ◆Usable with flat mirrors or ball lenses Silicon avalanche photodiodes utilize internal multiplication to achieve impact ionization gain. As a result, they are optimized series of high-response devices that exhibit excellent sensitivity. OSI offers several sizes of detectors that can be used with flat windows or ball lenses for fiber optic applications.
◆Large active area ◆Ideal for confirming beam movement, etc. ◆Sensor applications
The FCI-InGaAs-QXXX series is an InGaAs photodiode with a large active area. OSI Optoelectronics has world-class manufacturing facilities in India and Malaysia in the field of optoelectronics, and has been supplying OEM photodetectors for over 30 years. Based on years of experience, we provide products with excellent reliability and cost performance, utilizing efficient manufacturing know-how to meet the requirements of mass production.
◆1D or 2D active area effect ◆Compatible with active area size and packaging ◆Position sensing
Segmented, the lateral effect PSD is available in one-dimensional or two-dimensional active areas. The size and packaging of the active area can be adapted to fit a wide range of applications. Since the lateral effect PSD is most suitable for measuring large lateral displacements, segmented detectors are typically used in beam null applications. OSI Optoelectronics has world-class manufacturing facilities in India and Malaysia in the field of optoelectronics and has been supplying OEM photodetectors for over 30 years. Based on years of experience, we provide reliable and cost-effective products based on efficient manufacturing know-how that meets the requirements of mass production.
◆Large diameter active area size ◆Wavelength range: 1100-1620nm ◆IR sensitivity detector
The FCI-InGaAs-XXX-X series with active area sizes of 1mm, 1.5mm, and 3mm are part of OSI Optoelectronics' IR sensitive detectors that have excellent responsiveness from 1100nm to 1620nm (also with weak signal sensitivity). OSI Optoelectronics has world-class manufacturing facilities in India and Malaysia in the field of optoelectronics and has been supplying photodetectors as an OEM for over 30 years. Based on years of experience, they provide reliable and cost-effective products based on efficient manufacturing know-how that meets the requirements for mass production.
◆High-speed silicon photodiode ◆Peak in the 800nm wavelength range ◆Specifications for high bandwidth applications (from 100Mbps to 1.25GHz)
High-speed silicon photodiodes have a peak in the 800nm wavelength range and are designed for high bandwidth applications (from 100Mbps to 1.25GHz). There are two types of photodiodes: 100Mbps to 622Mbps and 1.25Gbps. 【100Mbps / 622Mbps Photodiode】 The large effective area high-speed silicon detector series from OSI Optoelectronics is designed for short-distance data communication. 【850nm, 1.25 Gbps Photodiode】 The large effective area high-speed silicon PIN photodiode series from OSI Optoelectronics is designed for short-distance data communication at 850nm.
