Research tools for high-stress GaN devices
Research tools for high-stress GaN devices
This explains the theoretical model of GaN multi-quantum wells (MQW) under high stress. It is possible to obtain the following results for GaN device LEDs grown on silicon in arbitrary crystal orientations using the CrossLight device simulator. The tensile stress from the silicon substrate reduces the band gap of the multi-quantum wells (MQW) and results in a longer wavelength. There is a decrease in piezoelectric charges within the multi-quantum wells (MQW). The reduction in internal quantum efficiency (IQE) is caused by the increase in piezoelectric charges at the electron blocking layer (EBL) interface.
- Company：クロスライトソフトウェアインク日本支社
- Price：Other
