GaN substrate
The wide bandgap, fast switching speed, and low on-resistance are also advantageous points!
We manufacture and sell "GaN substrates." These substrates use GaN (gallium nitride), a semiconductor that became widely known as a material for blue light-emitting diodes. However, due to its high breakdown electric field strength and thermal conductivity, it has recently been applied as a material for advanced power semiconductors. Please feel free to contact us when you need our services. 【Basic Specifications (Partial)】 ■ Diameter: Φ2", Φ3", Φ4", Φ6" ■ GaN Film Thickness: 3μm, 3.5μm, 4μm, 4.5μm, 6μm, up to 100μm available upon special request ■ Crystal Orientation: C-axis (0001) ■ Conductivity Type: Un-Doped, N-type, P-type ■ XRD: (002) ≦ 300 arcsec, (102) ≦ 400 arcsec *For more details, please refer to the PDF document or feel free to contact us.
- Company：エムシーオー
- Price：Other
