The wide bandgap, fast switching speed, and low on-resistance are also advantageous points!
We manufacture and sell "GaN substrates." These substrates use GaN (gallium nitride), a semiconductor that became widely known as a material for blue light-emitting diodes. However, due to its high breakdown electric field strength and thermal conductivity, it has recently been applied as a material for advanced power semiconductors. Please feel free to contact us when you need our services. 【Basic Specifications (Partial)】 ■ Diameter: Φ2", Φ3", Φ4", Φ6" ■ GaN Film Thickness: 3μm, 3.5μm, 4μm, 4.5μm, 6μm, up to 100μm available upon special request ■ Crystal Orientation: C-axis (0001) ■ Conductivity Type: Un-Doped, N-type, P-type ■ XRD: (002) ≦ 300 arcsec, (102) ≦ 400 arcsec *For more details, please refer to the PDF document or feel free to contact us.
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【Other Basic Specifications (Partial)】 ■Crystal Structure: GaN on Sapphire/GaN on Silicon/GaN on SiC ■Substrate: Sapphire substrate/Silicon substrate/SiC substrate/GaAs substrate ■Packaging: Clean room (Class 100), cassette case with 25 pieces, single case *For more details, please refer to the PDF document or feel free to contact us.
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For more details, please refer to the PDF document or feel free to contact us.
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MCOR Corporation has been engaged in the manufacturing and sales of silicon wafers, as well as various thin film deposition processes for silicon and metal crystals, quartz processing, and the sales of IC foundries since its establishment in 1994. We respond to our customers' needs with a rich lineup of products.