Bourns' IGBT is ideal for high voltage and high current applications.
Industry-leading high power efficiency * low switching loss
BOURNS has released an IGBT that combines a MOS structure gate input with a bipolar power transistor functioning as an output switch. By adopting TGFS technology, it achieves operational characteristics that reduce the collector-emitter saturation voltage V CE(sat) and minimize switching losses. <Features> - Discrete IGBT integrated with FRD - Advanced Trench Gate Field Stop (TGFS) technology - Low saturation voltage drop (V CE(sat)) - Low switching losses - TO252, TO247, TO247N packages - RoHS compliant - JEDEC standard compliant For sample requests, please feel free to contact our authorized distributor, Seiwa.
- Company:セイワ 東京本社、関西支社、名古屋営業所、中国無錫 グループ会社 エレクトロン(長野県松本市)
- Price:Other