Magazine meeting: Reacquainting with silsesquioxane.
This is a discussion about the relationship between the processing temperature, molecular structure, and physical properties such as dielectric constant of silsesquioxane. It seems that the newly synthesized silsesquioxane showed a decrease in both dielectric constant and dielectric loss tangent as the processing temperature increased from 100°C to 200°C to 300°C. For more details, please refer to the link below:
https://banyohkagaku.co.jp/infodetail?wgd=news-162&wgdo=date-DESC,sort-ASC

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