Technical Information "Evaluation of Band Gap for Oxide and Nitride Thin Films (C0462)" and one other item published.

High-precision band gap evaluation is possible through combined analysis of XAFS and XPS.

The band gap of thin film samples has been measured using analytical methods such as UV-Vis, PL, and XPS, but the cases that could be evaluated were limited due to constraints related to the sample structure, such as materials, film thickness, and substrates. This time, through the combined analysis of XAFS and XPS, it has become possible to reduce the constraints of the sample structure and achieve a higher precision band gap evaluation than before. This method is particularly effective for the evaluation of various oxide and nitride films. This document presents a case study on the band gap evaluation of silicon nitride (SiN) films. Measurement methods: XAFS, XPS. Product fields: solar cells, lighting, oxide semiconductors, power devices. Analysis purpose: evaluation of electronic states. For more details, please download the document or contact us.

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You can evaluate the causes and total amount of organic contamination in the manufacturing process.

It is known that the adsorption of organic substances on the wafer surface can lead to various issues, such as the degradation of gate oxide film breakdown voltage. Therefore, as the miniaturization and high integration of semiconductor devices progress, it has become increasingly important to monitor not only inorganic substances but also trace amounts of organic substances. Here, we present a case where silicon wafers were stored in two types of wafer cases, and the organic contamination components adhered to the entire wafer surface were concentrated using a wafer analyzer and evaluated using GC/MS.

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The "Mechanical Stitching Method" by Nichinichisui Road Machinery Co., Ltd. is a new technique that allows for the repair of metal cracks without the application of heat. By using special bolts and reinforcement plates, cracks are physically removed, and repairs are made without causing any thermal impact on the base material. Repairs can be carried out even in environments where open flames cannot be used. Since no heat is applied, the disassembly of equipment is kept to a minimum. ◎ For more details, please contact us. ◎ If a detailed technical explanation is needed, please contact us.

The "Mechanical Stitching Method" by Nichinichisui Road Machinery Co., Ltd. is a new technique that allows for the repair of metal cracks without the application of heat. By using special bolts and reinforcement plates, cracks are physically removed, and repairs are made without any thermal impact on the base material. Repairs can be conducted in environments where open flames cannot be used. Since no heat is applied, the disassembly of equipment is minimized. ◎ For more details, please contact us. ◎ If a detailed technical explanation is required, please contact us.

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The "Mechanical Stitching Method" by Nichinichisui Road Machinery Co., Ltd. is a new technique that allows for the repair of metal cracks without the application of heat. By using special bolts and reinforcement plates, cracks are physically removed, and repairs are made without affecting the base material with heat. Repairs can be carried out in environments where open flames cannot be used. Since no heat is applied, the disassembly of equipment is minimized. ◎ For more details, please contact us. ◎ If a detailed technical explanation is needed, please contact us.

The "Mechanical Stitching Method" by Nichinichisui Road Machinery Co., Ltd. is a new technique that allows for the repair of metal cracks without the application of heat. By using special bolts and reinforcement plates, cracks are physically removed, and repairs are made without causing any thermal impact on the base material. Repairs can be carried out even in environments where open flames cannot be used. Since no heat is applied, the disassembly of equipment is minimized. ◎ For more details, please contact us. ◎ If a detailed technical explanation is needed, please contact us.