Evaluation of dopant distribution and junctions is possible even in extremely shallow regions.
The miniaturization of devices has increased the need for evaluating the depth distribution of impurities in extremely shallow regions. To conduct an accurate assessment, SIMS analysis using a primary ion beam with lower energy (below 1 keV) is required. Figure 1 shows examples of measurements of Si wafers implanted with BF2+ 1 keV, P+ 1 keV, and As+ 1 keV, using a primary ion beam energy of 250 eV to 300 eV.
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Analysis of LSI and memory.
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Download All Catalogs![[Analysis Case] Evaluation of Ultra-Shallow Implant Profiles by SIMS_C0009](https://image.mono.ipros.com/public/catalog/image/01/6df/210255/IPROS5042409198483037188.jpg?w=120&h=170)
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MST is a foundation that provides contract analysis services. We possess various analytical instruments such as TEM, SIMS, and XRD to meet your analysis needs. Our knowledgeable sales representatives will propose appropriate analysis plans. We are also available for consultations at your company, of course. We have obtained ISO 9001 and ISO 27001 certifications. Please feel free to consult us for product development, identifying causes of defects, and patent investigations! MST will guide you to solutions for your "troubles"!