[Analysis Case] Ultra-high Sensitivity Measurement of Impurities in SiC Using SIMS
Evaluates bulk concentrations at the ppb to ppt level.
In the development of ultra-high voltage, low-loss SiC power devices that can be used in substations, controlling low carrier concentration is necessary, and SIMS analysis is effective for evaluating extremely low concentrations of impurities. In SIMS analysis, it is possible to evaluate extremely low concentrations by limiting the impurities to one element without simultaneously acquiring multiple elements. This document presents analysis examples that evaluate the extremely low concentration range of impurities in SiC with ultra-high sensitivity, which has been difficult to assess conventionally.
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Analysis of power devices.
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MST is a foundation that provides contract analysis services. We possess various analytical instruments such as TEM, SIMS, and XRD to meet your analysis needs. Our knowledgeable sales representatives will propose appropriate analysis plans. We are also available for consultations at your company, of course. We have obtained ISO 9001 and ISO 27001 certifications. Please feel free to consult us for product development, identifying causes of defects, and patent investigations! MST will guide you to solutions for your "troubles"!