Introducing the analysis results of ion implantation of arsenic into silicon using SIMS.
This page presents the results of analyzing samples where arsenic was ion-implanted into silicon using SIMS (ULVAC: ADEPT-1010). Arsenic (75As) interferes with the matrix silicon and residual gases such as oxygen or hydrogen, forming complex molecules (e.g., 29Si30Si16O), which requires a mass resolution of 3190. In Q-pole type SIMS, the mass resolution is only around 200, making mass separation difficult. However, by measuring the complex molecular ions of silicon and arsenic, we were able to lower the detection limit to 2×10^15 [atoms/cm3]. [Implantation Conditions] ■ Energy: 700 [keV] ■ Dose: 1×10^15 [atoms/cm2] *For more details, please refer to the PDF document or feel free to contact us.
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The Ion Tech Center is a professional group that provides consulting and technical development support in "ion implantation," "physical analysis," and research and development. We aim to be a good partner for companies and university researchers as a creative laboratory equipped with cutting-edge technology and facilities that meet the demands of the times.