Analysis of Al ion implantation depth into SiC substrates

Introducing the results of the analysis of samples where aluminum was injected into a SiC substrate using a BOX method.

This report presents the results of analyzing a sample in which aluminum was injected into a SiC substrate using SIMS (ULVAC: ADEPT-1010). Due to the high insulating properties of the SiC substrate, accurate measurements cannot be made when the primary ion beam is irradiated onto the sample surface because charge accumulates. Therefore, by simultaneously irradiating a low-energy electron beam onto the area where the primary ion beam is applied, charge accumulation is suppressed, allowing for accurate measurements. Since the mass number of aluminum (27) is adjacent to that of silicon (28), which is the matrix, we were able to lower the detection limit to 6×10^15 [atoms/cm3] by optimizing the measurement conditions. *For more details, please refer to the PDF document or feel free to contact us.*

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