We were able to lower the detection limit to 1E16 n/cm3. Introduction of analysis results by SIMS.
Impurity analysis is important in semiconductor material development, and secondary ion mass spectrometry (SIMS), which allows for high-sensitivity analysis, is suitable for this purpose. We present the results of analyzing a sample where aluminum was ion-implanted into silicon using SIMS (ULVAC: ADEPT-1010). Since the mass number of aluminum is adjacent to that of silicon, measurement with a Q pole-type SIMS is challenging. However, by optimizing the measurement conditions, we were able to lower the detection limit to 1E16n/cm3. [Implantation Conditions] ■ Energy: 180 keV ■ Dose: 1E15n/cm2 (The dose value used is obtained from our RBS.) *For more details, please refer to the PDF document or feel free to contact us.
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The Ion Tech Center is a professional group that provides consulting and technical development support in "ion implantation," "physical analysis," and research and development. We aim to be a good partner for companies and university researchers as a creative laboratory equipped with cutting-edge technology and facilities that meet the demands of the times.
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