Simulations can be performed according to the requested ion species, depth, and concentration.
We can provide simulations in response to customer requests such as "What should the energy and dosage be to achieve the desired depth and concentration?" and "What will the depth distribution of the dopant ions be with the specified energy and dosage?" (This service is based on requests for ion implantation.)
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basic information
Ion Implantation Simulation - Single Profile Calculation of implantation conditions from depth and concentration - Box Profile Calculation of multi-step implantation conditions Other Simulations - Diffusion after Heat Treatment Profile calculation before and after heat treatment - Calculation of Multilayer Structures Optimization of film thickness such as SiO2 However, the simulation does not guarantee the profile or concentration after implantation.
Price information
Please feel free to contact us regarding contract processing.
Delivery Time
※Please feel free to contact us.
Applications/Examples of results
In ion implantation for semiconductors, we are widely utilized by domestic companies and universities.
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Company information
The Ion Tech Center is a professional group that provides consulting and technical development support in "ion implantation," "physical analysis," and research and development. We aim to be a good partner for companies and university researchers as a creative laboratory equipped with cutting-edge technology and facilities that meet the demands of the times.
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