Simulation for ion species, depth and concentration.
Customer's request "How much energy and dose should be used to achieve the desired depth and concentration?" And "What depth distribution of dopant ions will be given at the specified energy and dose." , We can provide a simulation. (This service presupposes a request for ion implantation.)
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basic information
Ion implantation simulation ・ Single profile Calculation implantation conditions from depth and concentration ・ Box profile Calculation of multi-step implantation conditions Other simulations ・ Diffusion after heat treatment Profile calculation before and after heat treatment ・ Multi-layer structure calculation Optimization of film thickness such as SiO2 However, the simulation does not guarantee the profile or concentration after implantation.
Price information
****** Please feel free to contact us about fee of implantation service.
Delivery Time
※Please feel free to contact us.
Applications/Examples of results
We support many universities, institutes and corporates for implantation projects.
Company information
The Ion Tech Center is a professional group that provides consulting and technical development support in "ion implantation," "physical analysis," and research and development. We aim to be a good partner for companies and university researchers as a creative laboratory equipped with cutting-edge technology and facilities that meet the demands of the times.
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