How should cleaning agents and abrasives that match SIC, which has excellent chemical resistance different from silicone, be developed? This seminar will provide a clear understanding of that direction.
Speaker Part 1: Professor Akimasa Tasaka, Department of Functional Molecules and Life Chemistry, Doshisha University Part 2: Yuji Morisawa, Executive Director, Japan Exceed Co., Ltd. Target Audience: Researchers and personnel interested in SiC, processing, and materials Venue: Kawasaki City Educational and Cultural Center, Room 2 [Kanagawa, Kawasaki City] 12-minute walk from JR or Keikyu Line Kawasaki Station Date and Time: August 25, 2011 (Thursday) 13:30-16:40 Capacity: 30 people *Due to the possibility of high demand, please apply early. Participation Fee: [Early Bird Discount Price] 46,200 yen (tax included, including text costs) for up to 2 people from one company *Limited to Tech-Zone members who apply by August 11. Membership registration is free. *After August 11, the [Regular Price] will be 49,350 yen (tax included, including text costs) for up to 2 people from one company. ◆ When applying for the early bird discount, please select “1 person (early discount)” or “2 people (early discount)” in the number registration. ◆ Point discounts are not applicable to the early bird discount price. Point discount services can only be applied when applying at the regular price. ◆ If 3 people from the same organization apply, the fee will be 69,300 yen.
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**Abstract of the Lecture** Recently, due to the stable large-diameter production and mass production of SiC, the next processing processes have gained attention. Currently, SF6 is being considered as an etching gas from a cost perspective. This lecture will elucidate the smoothing mechanism of the SiC surface in NF3 gas and NF3/O2 mixed gas plasma, suppress the generation of spikes that hinder smoothing by lowering the gas pressure, and detail the effect of Ar on the smoothing of the SiC surface using NF3/Ar mixed gas plasma to also suppress pillar formation. Furthermore, the basic characteristics of the NF3 gas used will be mentioned, along with safety measures during its use. **Lecture Summary** SiC enables high-temperature operation above 400°C, which is impossible with Si, and is also energy-efficient, leading to its rapid adoption in the automotive, communications, and energy sectors. In polishing mass production lines, 3-inch to 4-inch wafers have become mainstream, and crystal manufacturers are also advancing the development of 6-inch wafers. However, SiC is hard and has excellent chemical resistance to acids and alkalis, requiring significantly more processing time compared to Si. In the latter part, the lecture will also cover the cleanliness differences due to various cleaning methods.
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P2
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Lecture 1: Basics of Etching Technology and Surface Smoothness Improvement in SiC Wafers and Substrates 1. Basic Properties and Safety of Nitrogen Trifluoride 2. Etching of Single-Crystal SiC Using NF3 Gas and NF3/O2 Mixed Gas Plasma 3. Mechanism of Surface Smoothing of SiC by Plasma Etching 4. Etching of Single-Crystal SiC Using NF3 Gas and NF3/Ar Mixed Gas Plasma Part 2: Key Points of Precision Polishing and Cleaning Technology for SiC Wafers 1. Background of SiC Wafer Processing Technology Development (Including Company History) 1-1 Development of Polishing Technology for Semiconductor Products and Various Wafers 1-2 Five Technologies of EXD 1-3 Roles of Polishing and Cleaning Required for Semiconductor Wafers 2. Polishing Technology for SiC 2-1 Types and Mechanisms of CMP 2-2 Chemical Mechanical Polishing (CMP) of SiC 2-3 Surface Evaluation and Measurement 3. Cleaning Technology for SiC 3-1 Types of Precision Cleaning Technologies Used for Semiconductor Wafers 3-2 Factors of Various Contaminations 3-3 Cleaning and Drying 4. Future Challenges 4-1 Cost Reduction 4-2 Considerations for the Environment, etc.
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