★ Considering the printing process and material properties, how can we realize the product? ★ Deepen understanding of the stabilization of device characteristics, which is a practical issue!
Seminar Number S20228 Instructor Kenji Nomura, Specially Appointed Associate Professor, Frontier Research Center, Tokyo Institute of Technology Target Audience Corporate representatives interested in oxide TFTs, etc. Venue Kyouka Square, 2F, High-Tech Center, Room 1, Chuo Ward, Tokyo 1 minute walk from Exit A3 of Hatchobori Station (Tokyo Metro Hibiya Line / JR Keiyo Line) 5 minutes walk from Exit A1 or A2 of Takaracho Station (Toei Subway Asakusa Line) Date and Time February 16, 2012 (Thursday) 13:30-16:30 Capacity 30 people *Please apply early as there may be a rush of applications. Participation Fee [Early Bird Discount Price] 46,200 yen (tax included, including text costs) for up to 2 people from one company *Limited to Tech-Zone members who apply by February 2. Membership registration is free. *After February 2, the [Regular Price] will be 49,350 yen (tax included, including text costs) for up to 2 people from one company.
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**Abstract of the Lecture** Amorphous oxide semiconductors, which can produce low-temperature, high-mobility TFTs, are attracting attention as channel materials for TFTs used in large, high-speed drive liquid crystal panels and high-resolution organic EL panels. In this lecture, I will first provide an overview of oxide semiconductors, followed by an explanation of the material design, fundamental properties, and device applications of amorphous oxide semiconductors. Additionally, I will discuss device characteristic stability, which is the most critical issue for practical implementation.
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1. Introduction 2. Amorphous Oxide Semiconductors and Device Applications 3. Fundamental Properties of Amorphous Oxide Semiconductors – a-In-Ga-Zn-O (a-IGZO) Ternary System 3-1. Local and Coordination Structure of Amorphous Oxide Semiconductors 3-2. Carrier Transport Characteristics – Percolation Conduction 3-3. Density of Defect Levels in the Band Gap 3-4. Role of Oxygen Deficiency and Hydrogen 4. TFT Applications Using Amorphous Oxide Semiconductors 4-1. History of Oxide TFTs 4-2. TFT Characteristics and Uniformity of a-IGZO TFTs and Their Features 4-3. Fabrication Methods and TFT Structures 4-4. Effects of Thermal Treatment on TFT Characteristic Improvement 4-5. Application Development of Oxide Semiconductor TFTs 5. Stability of TFT Characteristics – Effects of Bulk, Interface, and Surface Defects 5-1. Evaluation of TFT Characteristic Stability for FPD Applications 5-2. Constant Current Stress Stability and Its Degradation Mechanism 5-3. Bias Stability and Degradation Mechanism Under Light Irradiation 5-4. Photoresponse and Its Origin 5-5. Passivation Effects 6. Conclusion – Recent Advances and Future Challenges
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