High-quality sputtering through uniform plasma confinement
The "Uniform Plasma Sputtering Device" adopts the so-called opposing target sputtering method. The conventional opposing target sputtering method utilizes the mirror magnetic field as it is, but it has been improved with the aim of sputtering while taking advantage of the characteristics of the mirror magnetic field. Utilizing the plasma confinement method with a mirror magnetic field for sputtering is very effective, as it does not require significant changes in its form for sputtering use; by placing two targets opposite each other, plasma can be efficiently confined between them. In contrast, plasma confinement methods using toroidal coils, such as the tokamak type, face difficulties when applied to sputtering, and currently, a form resembling a cross-section of a toroidal coil is typically used. In this case, drift occurs, and the plasma cannot be sufficiently confined, causing it to spread within the container. However, merely having a mirror magnetic field is advantageous for plasma confinement between targets when used for sputtering, but uniformity cannot be expected. Therefore, the Uniform Plasma Sputtering Device achieves both plasma confinement and uniformity.
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basic information
【Features】 ●Uniform plasma distribution ●Independent plasma chamber ●Low-temperature sputtering (SiO2, 2KW, 1 hour) with substrate temperature below 100°C ●Formation of dense films and alloy films without compositional deviation due to plasma impact-free on the substrate ●Reactive sputter films are efficiently formed by activating sputter particles (target material) as electrons rapidly oscillate between targets without using special gases like CVD. ●Please consult us for test sputtering. ●For other functions and details, please contact us.
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Applications/Examples of results
● Conductive film and protective film for organic EL ● Anti-reflective film ● Transparent conductive film ● Alloy film (superconducting thin films, solar cell thin films, etc.) ● Film formation on substrates sensitive to heat ● Reduction of film formation costs ○ For more details, please contact us.
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Company information
The necessity of thin film production in next-generation technologies is increasing more and more. In thin film production, there is a demand for technology that is low-temperature, dense, and also highly productive. Our company has made it possible to implement arc discharge measures that were not achievable with conventional opposing target sputtering methods, and we manufacture and sell uniform plasma sputtering devices that meet the above conditions.