Case studies of XRD and XRR analysis of oxide semiconductors.
The transparent oxide semiconductor IGZO thin film is being researched and developed as a TFT material for displays. IGZO is a material whose properties change significantly based on the composition of the film, the presence of oxygen vacancies, and crystallinity, making it important to consider the correlation with film quality. We will introduce a case where the crystallinity, film thickness, and film density of three types of IGZO thin films with different heating temperatures were measured and compared using XRD and XRR. It was confirmed non-destructively that crystallization progresses at high temperatures, resulting in higher film density.
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Analysis of display, oxide semiconductors, LSI, and memory.
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