This is a report comparing the cell configurations of 20nm class DRAM and 0nm class 2Gb DDR3 DRAM.
This is a reconstruction of the structural analysis of the "Samsung 20nm class 3GB (6x4Gbit) LPDDR3." The main purpose is to compare the cell configurations of the 20nm class DRAM with its predecessor, the 30nm class 2Gb DDR3 DRAM (the 20nm class is simply designated as "2X nm"). 【Features】 ■ Chip using six 2X nm class 4GB ■ Symmetrical configuration of two sets of three chip stacks within one package ■ Package thickness: 0.8mm with six die configuration For more details, please download the catalog or contact us.
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Table of Contents Executive Summary Device Summary Process Summary 1.0 Package and Die Markings 2.0 Process 3.0 Layout and Structural Analysis of the Memory Cell 4.0 Critical Dimensions 5.0 Major Findings 6.0 Materials Analysis For more details, please download the catalog or contact us.
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【Purpose】 ○ As a structural analysis report *For details, please request the materials or view the PDF data from the download.
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