Achieving high hardness, strong adhesion, and excellent wear resistance with room temperature film formation! By coating after removing impurities, it also contributes to improving fuel efficiency in automotive parts!
The hydrogen-free DLC film (ta-C) using the FCVA method differs from existing PVD and CVD methods by removing impurities through an electromagnetic filter, resulting in fewer particles, excellent adhesion, and high wear resistance. Additionally, since film formation is possible at room temperature, it can be applied to various materials such as low melting point materials like resins, ceramics, and rubber. Furthermore, thick films of over 10 micrometers can be created, enhancing the quality of automotive parts and increasing added value through longer lifespan. In addition to the DLC film, please also try the composite metal film "MiCC film," which excels in release properties during plastic molding. 【Features】 ■ Achieves high hardness, strong adhesion, and excellent wear resistance ■ Capable of creating thick films over 10 micrometers ■ Film formation possible at room temperature ■ Applicable to various materials *For more details, please download the PDF document or feel free to contact us.
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【Applications】 ■ Hard disk industry ■ Precision mold industry ■ Copiers ■ Automotive industry ■ Optical components ■ Resin materials etc.
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Our development technology has obtained international patents and plays a significant role in society. The super DLC (hydrogen-free ta-C film) produced by the FCVA method is formed through a completely different process compared to DLC films generated by existing PVD and CVD methods. Additionally, there is a composite metal film called "Micc film" that excels in release properties between metals and plastics. Coating films produced by the FCVA method are currently being rapidly adopted in fields such as the hard disk industry, precision machinery industry, and semiconductor industry, and future expansion into the automotive industry, nanoimprint industry, and biomaterials field is anticipated.