[Analysis Case] Quantification of Interstitial Atom Concentration in Silicon Single Crystals
Quantitative analysis of interstitial oxygen and carbon concentration non-destructively using infrared absorption method.
It is possible to non-destructively determine the interstitial oxygen and carbon atom concentrations in silicon single crystals using FT-IR analysis. The concentrations are calculated from the peak heights of the absorption due to interstitial oxygen or carbon in the spectra measured by the transmission method. The calculation method is standardized by the Japan Electronics and Information Technology Industries Association (JEITA). Below are examples of calculated interstitial oxygen atom concentrations.
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Evaluation of Chemical Bonding State
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