It is possible to evaluate the depth distribution of B, Al, N, P, and As in SiC with high sensitivity.
SiC is used as a power device material due to its physical properties, but unlike Si, the diffusion of dopants after thermal treatment following ion implantation is difficult. Therefore, it is necessary to control the distribution in the depth direction through multi-step ion implantation. SIMS analysis can evaluate impurity concentrations in the depth direction with high sensitivity (below ppm), making it suitable for assessing the distribution of dopant elements in SiC. It is also possible to evaluate the distribution of light elements (such as H, C, O, F, etc.). Please contact us regarding any elements you would like to evaluate.
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basic information
For detailed data, please refer to the catalog.
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Applications/Examples of results
Analysis of power devices.
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Download All Catalogs![[Analysis Case] Depth Direction Analysis of Dopant Elements in SiC by SIMS 1_C0247](https://image.mono.ipros.com/public/catalog/image/01/e0f/333688/IPROS8465960026781905502.jpg?w=120&h=170)
![[Analysis Case] Depth Direction Analysis of Dopant Elements in SiC Using SIMS 2_C0298](https://image.mono.ipros.com/public/catalog/image/01/3ba/334753/IPROS346150606312769678.jpg?w=120&h=170)
Company information
MST is a foundation that provides contract analysis services. We possess various analytical instruments such as TEM, SIMS, and XRD to meet your analysis needs. Our knowledgeable sales representatives will propose appropriate analysis plans. We are also available for consultations at your company, of course. We have obtained ISO 9001 and ISO 27001 certifications. Please feel free to consult us for product development, identifying causes of defects, and patent investigations! MST will guide you to solutions for your "troubles"!
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