Successfully captured impurity diffusion from the upper side of the gate oxide film using D-SIMS!
In GaN devices, the diffusion of components (impurities) originating from the pre-process of the gate oxide film leads to insulation failures, making it necessary to identify their concentration distribution and diffusion sources. We have developed a technology that provides high flatness to the surface of thin-film processed GaN compounds. As a result, we successfully captured the diffusion of impurities from the upper side of the gate oxide film using D-SIMS. *For detailed information, please refer to the attached PDF document. For further inquiries, feel free to contact us.
Inquire About This Product
basic information
*You can view the detailed content of the article in the attached PDF document. For more information, please feel free to contact us.*
Price range
Delivery Time
Applications/Examples of results
*You can view the detailed content of the article in the attached PDF document. For more information, please feel free to contact us.*
catalog（1）
Download All Catalogs
Company information
Our company offers contract analysis services. Since our establishment in August 2002, we have utilized reliable analysis and measurement technologies along with state-of-the-art equipment to provide optimal nano-level microfabrication, analysis, evaluation of reliability, environmental safety chemical analysis, and service solutions for a wide range of markets centered around semiconductors, liquid crystals, metals, and new materials. Please feel free to contact us if you have any requests.