[Analysis Case] Evaluation of B Penetration Amount from SSDP-SIMS Gate to Substrate
Measurement avoiding the effects of surface irregularities and high concentration layers using SSDP-SIMS.
By conducting SIMS analysis (SSDP-SIMS) from the substrate side, it is possible to obtain measurements that are not affected by the knock-on effects from the high-concentration layer on the surface due to surface roughness and sputtering. We evaluated the amount of boron penetration from the gate electrode (B-doped Poly-Si) into the substrate. Measurements from the substrate side showed no effects from knock-on, indicating that a more accurate evaluation of the penetration amount is possible. Thus, SSDP-SIMS is effective for assessing the barrier properties of barrier metals, the incorporation of metals into Low-k films, and the evaluation just beneath the rough silicide.
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For detailed data, please refer to the catalog.
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Analysis of LSI and memory.
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Download All Catalogs![[Analysis Case] Evaluation of B Penetration from Gate Electrode to Substrate using SSDP-SIMS_C0028](https://image.mono.ipros.com/public/catalog/image/01/c56/332035/IPROS4408370548062455664.jpg?w=120&h=170)
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MST is a foundation that provides contract analysis services. We possess various analytical instruments such as TEM, SIMS, and XRD to meet your analysis needs. Our knowledgeable sales representatives will propose appropriate analysis plans. We are also available for consultations at your company, of course. We have obtained ISO 9001 and ISO 27001 certifications. Please feel free to consult us for product development, identifying causes of defects, and patent investigations! MST will guide you to solutions for your "troubles"!
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