Quantification of Si(1-x)Gex samples with compositional gradient.

Analyze three or more samples with known concentration to solve the problem of two points.

SIMS (Secondary Ion Mass Spectrometry) is used to accurately quantify the concentration distribution of Ge in Si(1-x)Gex films with a compositional gradient used in devices, in the depth direction. When analyzing Si(1-x)Gex films with SIMS, there are two issues that must be resolved. The first issue is that the secondary ion intensity of Ge relative to Si changes significantly with variations in the compositional ratio, so it is necessary to determine the relative sensitivity factor for each compositional ratio. The second issue is that the sputtering rate at each analysis point changes due to variations in the compositional ratio of Si and Ge, so it is necessary to establish the relationship between the compositional ratio and the sputtering rate. To solve these two issues, samples with known concentrations were analyzed at more than three points, and the RSF and sputtering rates were determined. *For more details, please refer to the PDF document or feel free to contact us.*

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